MS17N03Q8

Preliminary_MS17N03Q8 N-Channel Logic Level Enhancement Mode MOSFET Description MS17N03Q8 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features RDS(ON)=15mΩ(max.)@VGS=10V, ID=10A Simple drive requirement Low on-resistance Fast switching speed RoHS compliant package Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [MS17N03Q8] © Bruckewell Technology Corporation Rev. A -2014 Preliminary_MS17N03Q8 N-Channel Logic Level Enhancement Mode MOSFET MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Value VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Drain Current -Continuous (TC=25°C) ID Drain Current -Continuous (TC=100°C) 10 8 IDM Pulsed Drain Current (Note 1) 40 IAS Avalanche Current EAS Avalanche Energy @ L=0.1mH , ID=10A , RG=25Ω 12 5 EAR Repetitive Avalanche Energy @ L=0.005mH (Note 2) 2.5 Power Dissipation (TA=25°C) (Note 3) PD Power Dissipation (TA=100°C) 3 1.5 TJ/TSTG Operating Junction and Storage Temperature Range -55 to +175 100% UIS testing in condition of VD=15V , L=0.1mH , VG=10V, IL=10A, Rated VDS=30V N-CH Unit V V A A A A mJ mJ W W °C Thermal Data Symbol Par...