SSM04N70BGP-A

SSM04N70BGP-A N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS 650V R DS(ON) 2.4Ω I D 4A Pb-free; RoHS-compliant TO-220 G D S TO-220 (suffix P) DESCRIPTION The SSM04N70BGP-A achieves fast switching performance with low gate charge without a complex drive circuit. It is suitable for high voltage applications such as AC/DC converters, SMPS and general off-line switching circuits. The SSM04N70BGP-A is in TO-220 for through-hole mounting where a small footprint is required on the board, and/or an external heatsink is to be attached. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS VGS ID IDM PD EAS IAR EAR TSTG TJ Drain-source voltage Gate-source voltage Continuous drain current, TC = 25°C Pulsed drain current1 TC = 100°C Total power dissipation, TC = 25°C Linear derating factor Single pulse avalanche energy3 Avalanche current Repetitive avalanche energy Storage temperature range Operating junction temperature range THERMAL CHARACTERISTICS Symbol Parameter RΘJC RΘJA Maximum thermal resistance, junction-case Maximum thermal resistance, junction-ambient Notes: 1. Pulse width must be limited to avoid exceeding the safe operating area. 2. Pulse width <300us, duty cycle <2%. 3. Starting Tj = 25°C, VDD=50V , L=25mH , RG=25Ω , IAS= 4A. 9/29/2006 Rev.3.1 www.SiliconStandard.com Value 650 ±30 4 2.5 15 62.5 0.5 100 4 4 -55 to 150 -55...