TSHA6500, TSHA6501, TSHA6502, TSHA6503
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
94 8389
DESCRIPTION The TSHA650. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package.
FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 24° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
with
APPLICATIONS
• Infrared remote control and free air data transmission systems with comfortable radiation angle
• This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass
PRODUCT SUMMARY
COMPONENT TSHA6500
Ie (mW/sr) 20
TSHA6501
25
TSHA6502
30
TSHA6503
35
Note Test conditions see table “Basic Characteristics”
ϕ (deg) ± 24 ± 24 ± 24 ± 24
λP (nm) 875 875 875 875
ORDERING INFORMATION
ORDERING CODE TSHA6500 TSHA6501 TSHA6502 TSHA6503
Note MOQ: minimum order quantity
PACKAGING Bulk Bulk Bulk Bulk
REMARKS MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation
TEST CONDITION
tp/T = 0.5, tp = 100 µs tp = 100 µs
SYMBOL VR IF IFM IFSM PV
tr (ns) 600 600 600 600
PACKAGE FORM T-1¾ T-1¾ T-1¾ T-1¾
VALUE 5
100 200 2.5 180
UNIT V mA mA A
mW
www.vishay.com 166
For technical questions, contact:
[email protected]
Document Number: 81022 Rev. 1.7, 05-Sep-08
TSHA6500, TSHA6501, TSHA6502, TSHA6503
Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors
875 nm, GaAlAs
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t ≤ 5 s, 2 mm from case
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB
Note Tamb = 25 °C, unless otherwise specified
SYMBOL
Tj Tamb Tstg Tsd RthJA
VALUE 100
- 40 to + 85 - 40 to + 100
260 230
UNIT °C °C °C °C K/W
PV - Power Dissipation (mW) IF - Forward Current (mA)
200
180
160
140
120 RthJA = 230 K/W 100
80
60
40
20
0 0
21142
10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Temperature coefficient of φe Angle of half intensity
IF = 100 mA, tp = 20 ms IF = 100 mA VR = 5 V
VR = 0 V, f = 1 MHz, E = 0 IF = 20 mA
Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time
Fall time Virtual source diameter
IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA
IF = 1.5 A IF = 100 mA
IF = 1.5 A
Note Tamb = 25 °C, unless otherwise specified
120
100
80
RthJA = 230 K/W 60
40
20
0 0
21143
10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
SYMBOL
VF TKVF
IR Cj TKφe ϕ λp Δλ TKλp tr tr tf tf d
MIN.
TYP. 1.5 - 1.6
20 - 0.7 ± 24 875 80 0.2 600 300 600 300 2.2
MAX. 1.8
100
UNIT V
mV/K µA pF %/K deg nm nm
nm/K ns ns ns ns mm
Document Number: 81022 Rev. 1.7, 05-Sep-08
For technical questions, contact:
[email protected]
www.vishay.com 167
TSHA6500, TSHA6501, TSHA6502, TSHA6503
Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant,
875 nm, GaAlAs
TYPE DEDICATED CHARACTERISTICS
PARAMETER
TEST CONDITION
Forward voltage
IF = 1.5 A, tp = 100 µs
Radiant intensity
IF = 100 mA, tp = 20 ms IF = 1.5 A, tp = 100 µs
Radiant power
IF = 100 mA, tp = 20 ms
Note Tamb = 25 °C, unless otherwise specified
BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified
PART TSHA6500 TSHA6501 TSHA6502 TSHA6503 TSHA6500 TSHA6501 TSHA6502 TSHA6503 TSHA6500 TSHA6501 TSHA6502 TSHA6503 TSHA6500 TSHA6501 TSHA6502 TSHA6503
SYMBOL
VF VF VF VF Ie Ie Ie Ie Ie Ie Ie Ie φe φe φe φe
MIN.
12 16 20 24 150 200 250 300
TYP. 3.2 3.2 3.2 3.2 20 25 30 35 240 300 360 420 22 23 24 25
MAX. 4.9 4.9 4.5 4.5 60 60 60 60
UNIT V V V V
mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr
mW mW mW mW
IF - Forward Current (A) IF - Forward Current (mA)
101
IFSM = 2.5 A (Single Pause)
t p/T= 0.01 100 0.05
0.1 0.2
0.5
10-1 10-2
94 8003
10-1
100 101
t p - Pulse Duration (ms)
102
Fig. 3 - Pulse Forward Current vs. Pulse Duration
104
tp = 100 µs t /T= 0.001 103 p
102
101 0
94 8005
1 23 VF - Forward Voltage (V)
4
Fig. 4 - Forward Current vs. Forward Voltage
www.vishay.com 168
For technical questions, contact:
[email protected]
Document Number: 81022 Rev. 1.7, 05-Sep-08
TSHA6500, TSHA6501, TSHA6502, TSHA6503
Infrared Emitting Diode, RoHS Com.