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TSHA6502 Dataheets PDF



Part Number TSHA6502
Manufacturers Vishay
Logo Vishay
Description Infrared Emitting Diode
Datasheet TSHA6502 DatasheetTSHA6502 Datasheet (PDF)

TSHA6500, TSHA6501, TSHA6502, TSHA6503 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs 94 8389 DESCRIPTION The TSHA650. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 24° • Low forward voltage • Suitable for high pulse current operation • Goo.

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TSHA6500, TSHA6501, TSHA6502, TSHA6503 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs 94 8389 DESCRIPTION The TSHA650. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 24° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS • Infrared remote control and free air data transmission systems with comfortable radiation angle • This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass PRODUCT SUMMARY COMPONENT TSHA6500 Ie (mW/sr) 20 TSHA6501 25 TSHA6502 30 TSHA6503 35 Note Test conditions see table “Basic Characteristics” ϕ (deg) ± 24 ± 24 ± 24 ± 24 λP (nm) 875 875 875 875 ORDERING INFORMATION ORDERING CODE TSHA6500 TSHA6501 TSHA6502 TSHA6503 Note MOQ: minimum order quantity PACKAGING Bulk Bulk Bulk Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation TEST CONDITION tp/T = 0.5, tp = 100 µs tp = 100 µs SYMBOL VR IF IFM IFSM PV tr (ns) 600 600 600 600 PACKAGE FORM T-1¾ T-1¾ T-1¾ T-1¾ VALUE 5 100 200 2.5 180 UNIT V mA mA A mW www.vishay.com 166 For technical questions, contact: [email protected] Document Number: 81022 Rev. 1.7, 05-Sep-08 TSHA6500, TSHA6501, TSHA6502, TSHA6503 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 875 nm, GaAlAs ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION Junction temperature Operating temperature range Storage temperature range Soldering temperature t ≤ 5 s, 2 mm from case Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB Note Tamb = 25 °C, unless otherwise specified SYMBOL Tj Tamb Tstg Tsd RthJA VALUE 100 - 40 to + 85 - 40 to + 100 260 230 UNIT °C °C °C °C K/W PV - Power Dissipation (mW) IF - Forward Current (mA) 200 180 160 140 120 RthJA = 230 K/W 100 80 60 40 20 0 0 21142 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Temperature coefficient of φe Angle of half intensity IF = 100 mA, tp = 20 ms IF = 100 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 20 mA Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time Virtual source diameter IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1.5 A IF = 100 mA IF = 1.5 A Note Tamb = 25 °C, unless otherwise specified 120 100 80 RthJA = 230 K/W 60 40 20 0 0 21143 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature SYMBOL VF TKVF IR Cj TKφe ϕ λp Δλ TKλp tr tr tf tf d MIN. TYP. 1.5 - 1.6 20 - 0.7 ± 24 875 80 0.2 600 300 600 300 2.2 MAX. 1.8 100 UNIT V mV/K µA pF %/K deg nm nm nm/K ns ns ns ns mm Document Number: 81022 Rev. 1.7, 05-Sep-08 For technical questions, contact: [email protected] www.vishay.com 167 TSHA6500, TSHA6501, TSHA6502, TSHA6503 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs TYPE DEDICATED CHARACTERISTICS PARAMETER TEST CONDITION Forward voltage IF = 1.5 A, tp = 100 µs Radiant intensity IF = 100 mA, tp = 20 ms IF = 1.5 A, tp = 100 µs Radiant power IF = 100 mA, tp = 20 ms Note Tamb = 25 °C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified PART TSHA6500 TSHA6501 TSHA6502 TSHA6503 TSHA6500 TSHA6501 TSHA6502 TSHA6503 TSHA6500 TSHA6501 TSHA6502 TSHA6503 TSHA6500 TSHA6501 TSHA6502 TSHA6503 SYMBOL VF VF VF VF Ie Ie Ie Ie Ie Ie Ie Ie φe φe φe φe MIN. 12 16 20 24 150 200 250 300 TYP. 3.2 3.2 3.2 3.2 20 25 30 35 240 300 360 420 22 23 24 25 MAX. 4.9 4.9 4.5 4.5 60 60 60 60 UNIT V V V V mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW mW mW mW IF - Forward Current (A) IF - Forward Current (mA) 101 IFSM = 2.5 A (Single Pause) t p/T= 0.01 100 0.05 0.1 0.2 0.5 10-1 10-2 94 8003 10-1 100 101 t p - Pulse Duration (ms) 102 Fig. 3 - Pulse Forward Current vs. Pulse Duration 104 tp = 100 µs t /T= 0.001 103 p 102 101 0 94 8005 1 23 VF - Forward Voltage (V) 4 Fig. 4 - Forward Current vs. Forward Voltage www.vishay.com 168 For technical questions, contact: [email protected] Document Number: 81022 Rev. 1.7, 05-Sep-08 TSHA6500, TSHA6501, TSHA6502, TSHA6503 Infrared Emitting Diode, RoHS Com.


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