Infrared Emitting Diode
TSHA6500, TSHA6501, TSHA6502, TSHA6503
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
94...
Description
TSHA6500, TSHA6501, TSHA6502, TSHA6503
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
94 8389
DESCRIPTION The TSHA650. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package.
FEATURES Package type: leaded Package form: T-1¾ Dimensions (in mm): Ø 5 Peak wavelength: λp = 875 nm High reliability Angle of half intensity: ϕ = ± 24° Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
with
APPLICATIONS
Infrared remote control and free air data transmission systems with comfortable radiation angle
This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass
PRODUCT SUMMARY
COMPONENT TSHA6500
Ie (mW/sr) 20
TSHA6501
25
TSHA6502
30
TSHA6503
35
Note Test conditions see table “Basic Characteristics”
ϕ (deg) ± 24 ± 24 ± 24 ± 24
λP (nm) 875 875 875 875
ORDERING INFORMATION
ORDERING CODE TSHA6500 TSHA6501 TSHA6502 TSHA6503
Note MOQ: minimum order quantity
PACKAGING Bulk Bulk Bulk Bulk
REMARKS MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation
...
Similar Datasheet