C1678

SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-220 package ·Low collector saturation voltage APPLICATIONS ·27MHz RF power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Product Specification 2SC1678 Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VCBO VCEO VEBO IC IB IE PC Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Emitter current Collector power dissipation Junction temperature Storage temperature Open emitter Open base Open collector TC=25 VALUE 65 65 4 3 0.4 -3 10 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com Product Specification 2SC1678 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-emitter saturation voltage IC=0.5A; IB=50m A V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 1.0 V 65 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 65 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 4V ICBO Collector cut-off current VCB=30V;IE=0 10 µA ICEO Collector cut-off current VCE=20V;IB=0 100 µA hFE-1 DC current gain IC=0.5A ; VCE=5V 15 hFE-2 DC current gain IC=1.5A ; VCE=5V 10 COB Collectpr output capacitance IE=0 ; VCB=10V, f=1MHz 30 pF fT Transition frequency I...