UTC9015

UTC 9015 PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. (450mW) *Excellent hFE linearity. *Complementary to UTC 9014 1 TO-92 1: EMITTER ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATING Collector-base voltage VCBO -50 Collector-emitter voltage VCEO -45 Emitter-base voltage VEBO -5 Collector current Ic -100 Collector dissipation Pc 450 Junction Temperature Tj 150 Storage Temperature TSTG -55 ~ +150 2: BASE 3: COLLECTOR UNIT V V V mA mW °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN Collector-base breakdown voltage BVCBO Ic=-100µA, IE=0 -50 Collector-emitter breakdown voltage BVCEO Ic=-1mA, IB=0 -45 Emitter-base breakdown voltage BVEBO IE=-100µA, Ic=0 -5 Collector cutoff current ICBO VCB=-50V, IE=0 Emitter cutoff current IEBO VEB=-5V, IC=0 DC current gain hFE VCE=-5V, Ic=-1mA 60 Collector-emitter saturation voltage VCE(sat) Ic=-100mA, IB=-5mA Base-emitter saturation voltage VBE(sat) Ic=-100mA, IB=-5mA Base-emitter on voltage VBE(on) VCE=-5V, Ic=-2mA -0.6 Output Capacitance Cob VCB=-10V, IE=0, f=1MHz Current gain-Bandwidth Porduct fT VCE=-5V, Ic=-10mA 100 Noise Figure NF VCE=-5V, Ic=-0.2mA f=1KHz, Rs=1KΩ TYP 200 -0.2 -0.82 -0.65 4.5 190 0.7 MAX -50 -100 600 -0.7 -1.0 -0.75 7.0 10 UNIT V V V nA nA V V V pF MHz dB CLASSIFICATION OF hFE RANK A...