2SB1184

1. BASE 2. COLLECTOR 3. EMITTER 2SB1184(PNP) TO-251/TO-252-2L Transistor TO-251 1 23 Features Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Complements the 2SD1760 / 2SD1864. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units TO-252-2L VCBO Collector Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -3 A PC Collector Power Dissipation 1W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test conditions V(BR)CBO IC=-50µA, IE=0 V(BR)CEO IC=-1mA, IB=0 V(BR)EBO IE=-50µA, IC=0 ICBO VCB=-40V, IE=0 IEBO VEB=-4V, IC=0 hFE(1) VCE=-3V, IC=-0.5A VCE(sat) IC=-2A, IB=-0.2A VBE(sat) IC=-1.5A, IB=-0.15A fT VCE=-5V, IC=-0.5A, f=30MHz Cob VCB=-10V, IE=0, f=1MHz MIN TYP MAX UNIT -60 V -50 V -5 V -1 µA -1 µA 82 390 -1 V -1.2 V 70 MHz 50 pF CLASSIFICATION OF hFE(1) Rank Range Marking P 82-180 Q 120-270 R 180-390 Typical Characteristics 2SB1184(PNP) TO-251/TO-252-2L Transistor 2SB1184(PNP) TO-251/TO-252-2L Transistor ...