1. BASE
2. COLLECTOR 3. EMITTER
2SB1184(PNP)
TO-251/TO-252-2L Transistor
TO-251
1 23
Features
Low VCE(sat). VCE(sat) =...
1. BASE
2. COLLECTOR 3. EMITTER
2SB1184(
PNP)
TO-251/TO-252-2L
Transistor
TO-251
1 23
Features
Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Complements the 2SD1760 / 2SD1864.
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
TO-252-2L
VCBO
Collector Base Voltage
-60 V
VCEO
Collector-Emitter Voltage
-50 V
VEBO
Emitter-Base Voltage
-5 V
IC
Collector Current –Continuous
-3
A
PC Collector Power Dissipation
1W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance
Symbol
Test conditions
V(BR)CBO IC=-50µA, IE=0 V(BR)CEO IC=-1mA, IB=0 V(BR)EBO IE=-50µA, IC=0
ICBO VCB=-40V, IE=0 IEBO VEB=-4V, IC=0 hFE(1) VCE=-3V, IC=-0.5A VCE(sat) IC=-2A, IB=-0.2A VBE(sat) IC=-1.5A, IB=-0.15A fT VCE=-5V, IC=-0.5A, f=30MHz Cob VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-60 V -50 V -5 V
-1 µA -1 µA 82 390 -1 V -1.2 V 70 MHz 50 pF
CLASSIFICATION OF hFE(1) Rank Range Marking
P 82-180
Q 120-270
R 180-390
Typical Characteristics
2SB1184(
PNP)
TO-251/TO-252-2L
Transistor
2SB1184(
PNP)
TO-251/TO-252-2L
Transistor
...