CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNP CMLT3946E CMLT3946EG* NPN/PNP
ENHANCED SPECIFICATION SURFACE MOUNT S...
CMLT3904E CMLT3904EG*
NPN CMLT3906E CMLT3906EG*
PNP CMLT3946E CMLT3946EG*
NPN/
PNP
ENHANCED SPECIFICATION SURFACE MOUNT SILICON
COMPLEMENTARY
TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are combinations of dual, enhanced specification
transistors in a space saving SOT-563 package, designed for small signal general purpose amplifier and switching applications.
SOT-563 CASE
* Device is Halogen Free by design
ENHANCED SPECIFICATIONS: ♦ BVCBO from 40V MIN to 60V MIN (
PNP) ♦ BVEBO from 5.0V MIN to 6.0V MIN (
PNP)
MARKING CODES: CMLT3904E: CMLT3906E: CMLT3946E: CMLT3904EG*: CMLT3906EG*: CMLT3946EG*:
L04 L06 L46 C4G C6G 46G
♦ hFE from 60 MIN to 70 MIN (
NPN/
PNP) ♦ VCE(SAT) from 0.3V MAX to 0.2V MAX (
NPN)
from 0.4V MAX to 0.2V MAX (
PNP)
MAXIMUM RATINGS: (TA=25°C) ♦Collector-Base Voltage
SYMBOL VCBO
60
Collector-Emitter Voltage ♦Emitter-Base Voltage
VCEO VEBO
40 6.0
Continuous Collector Current
IC 200
Power Dissipation (Note 1)
PD 350
Power Dissipation (Note 2)
PD 300
Power Dissipation (Note 3)
PD 150
Operating and Storage Junction Temperature Thermal Resistance
TJ, Tstg ΘJA
-65 to +150 357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
NPN
PNP
SYMBOL
TEST CONDITIONS
MIN TYP
TYP MAX
ICEV ♦BVCBO
VCE=30V, VEB=3.0V IC=10μA
-60 115
- 50 90 -
BVCEO ♦BVEBO
♦VCE(SAT) ♦VCE(SAT)
IC=1.0mA IE=10μA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA
40 60 6.0 7.5
- 0.057 - 0.100
55 7.9 0.050 0.100
0.100 0.200
V...