PCRKA30065F8

PCRKA30065F8 650V/300A Extremefast Diode PCRKA30065F8 650V / 300A Extremefast Diode Features „ AEC-Q101 Qualified „ Maximum Junction Temperature 175°C „ Extremefast technology with Soft Recovery „ Low Forward Voltage (VF = 1.06V (Typ) @IF = 300A) Applications „ Automotive Traction Modules „ General Power Modules Ordering Information P/N Packing Die Size Anode Area Die thickness Top metal Back metal Topside Passivation Wafer diameter Max. Possible Die per Wafer PCRKA30065F8 Wafer (Sawn-on-foil) Mils 283 X 394 235 X 345 3 Al (0.5% Cu) VNi/Ag SiN and Polyimide 200mm 331 May 2016 Microns 7,200 X 10,000 5,970 X 8,770 77 ©2016 Fairchild Semiconductor Corporation PCRKA30065F8 Rev. A1 1 www.fairchildsemi.com PCRKA30065F8 650V/300A Extremefast Diode Absolute Maximum Ratings (TVJ =25oC unless otherwise noted) Symbol VR IF TJ Tstg Parameter Voltage Cathode to Anode Continous forward current Junction Temperature Range Operating Junction Temperature Storage Temperature Range Ratings 650 (Note 1) -55 to +175 -55 to +150 +17 to +25 Units V A oC oC oC Notes: 1: Depends on the thermal properties of assembly Electrical Characteristics of the Diode (TVJ = 25°C unless otherwise noted). Symbol Parameter Test Conditions Min. Typ. Max. Units Static Characteristics (Tested on wafers) IR Reverse Leakage Current VBR Breakdown Voltage VF Forward Voltage VR = 650V IR = 1mA IF = 100A - - 30 650 - - - 1.06 1.65 μA V V Electrical Characteristics (Not subject to production test, v...