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DSA20C45PB Dataheets PDF



Part Number DSA20C45PB
Manufacturers IXYS
Logo IXYS
Description Schottky Diode
Datasheet DSA20C45PB DatasheetDSA20C45PB Datasheet (PDF)

Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA20C45PB 1 23 DSA20C45PB VRRM I FAV VF preliminary = 45 V = 2x 10 A = 0.61 V Backside: cathode Features / Advantages: ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching Applications: ● Rectifiers in switch mode power supplies (SMPS).

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Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA20C45PB 1 23 DSA20C45PB VRRM I FAV VF preliminary = 45 V = 2x 10 A = 0.61 V Backside: cathode Features / Advantages: ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching Applications: ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters Package: TO-220 ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131030a Schottky Symbol VRSM VRRM IR VF I FAV Definition Conditions max. non-repetitive reverse blocking voltage max. repetitive reverse blocking voltage reverse current, drain current VR = 45 V VR = 45 V forward voltage drop IF = 10 A IF = 20 A IF = 10 A IF = 20 A average forward current TC = 160°C rectangular d = 0.5 VF0 rF R thJC R thCH Ptot I FSM CJ threshold voltage slope resistance for power loss calculation only thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current junction capacitance t = 10 ms; (50 Hz), sine; VR = 0 V VR = 5 V f = 1 MHz DSA20C45PB TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C TVJ = 175°C preliminary Ratings min. typ. max. 45 45 200 2 0.72 0.87 0.61 0.75 10 Unit V V µA mA V V V V A TVJ = 175°C TC = TVJ = TVJ = 25°C 45°C 25°C 0.50 326 0.43 V 12.7 mΩ 2.4 K/W K/W 65 W 260 A pF IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131030a Package TO-220 Symbol Definition I RMS TVJ T op Tstg Weight RMS current virtual junction temperature operation temperature storage temperature MD mounting torque F C mounting force with clip Conditions per terminal 1) Product Marking Part Number Logo Assembly Line Lot # Date Code XXXXXX Zyyww abcdef Part number D = Diode S = Schottky Diode A = low VF 20 = Current Rating [A] C = Common Cathode 45 = Reverse Voltage [V] PB = TO-220AB (3) DSA20C45PB preliminary Ratings min. typ. max. Unit 35 A -55 175 °C -55 150 °C -55 150 °C 2g 0.4 0.6 Nm 20 60 N Ordering Standard Part Number DSA20C45PB Marking on Product DSA20C45PB Delivery Mode Tube Quantity Code No. 50 503675 Equivalent Circuits for Simulation I V0 R0 Schottky V 0 max R0 max threshold voltage slope resistance * 0.43 9.6 * on die level T VJ = 175 °C V mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131030a Outlines TO-220 E ØP 4 123 3x b2 3x b 2x e L1 L Q D H1 A A1 C A2 DSA20C45PB preliminary Dim. A A1 A2 b b2 C D E e H1 L L1 ØP Q Millimeter Min. Max. 4.32 1.14 2.29 4.82 1.39 2.79 0.64 1.01 1.15 1.65 0.35 0.56 14.73 16.00 9.91 2.54 5.85 10.66 BSC 6.85 12.70 13.97 2.79 5.84 3.54 4.08 2.54 3.18 Inches Min. Max. 0.170 0.045 0.090 0.190 0.055 0.110 0.025 0.040 0.045 0.065 0.014 0.022 0.580 0.630 0.390 0.100 0.230 0.420 BSC 0.270 0.500 0.550 0.110 0.230 0.139 0.161 0.100 0.125 1 23 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131030a .


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