Document
Schottky Diode Gen ²
High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode
Part number
DSA60C150PB
1 23
DSA60C150PB
VRRM I FAV VF
= 150 V = 2x 30 A = 0.8 V
Backside: cathode
Features / Advantages:
● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced
protection circuits ● Low noise switching
Applications:
● Rectifiers in switch mode power supplies (SMPS)
● Free wheeling diode in low voltage converters
Package: TO-220
● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131031c
DSA60C150PB
Schottky
Symbol VRSM VRRM IR
VF
I FAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current, drain current
VR = 150 V
VR = 150 V
forward voltage drop
IF = 30 A
IF = 60 A
IF = 30 A
IF = 60 A
average forward current
TC = 150°C
rectangular
d = 0.5
VF0 rF R thJC R thCH Ptot I FSM CJ
threshold voltage slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation max. forward surge current junction capacitance
t = 10 ms; (50 Hz), sine; VR = 0 V VR = 12 V f = 1 MHz
TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 125°C TVJ = 25°C
TVJ = 125°C
TVJ = 175°C
Ratings
min. typ. max. 150 150 450 5 0.93 1.09 0.80 0.98 30
Unit V V
µA mA
V V V V A
TVJ = 175°C
TC = TVJ = TVJ =
25°C 45°C 25°C
0.50 289
0.55 V 6 mΩ
0.85 K/W K/W
175 W 390 A
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131031c
Package TO-220
Symbol Definition
I RMS TVJ T op Tstg Weight
RMS current virtual junction temperature operation temperature storage temperature
MD mounting torque
F C
mounting force with clip
Conditions
per terminal 1)
DSA60C150PB
Ratings
min. typ. max. 35
-55 175 -55 150 -55 150
2
0.4 0.6 20 60
Unit A °C °C °C g
Nm N
Product Marking
Part Number
Logo Assembly Line
Lot #
Date Code
XXXXXX
Zyyww
abcdef
Part number
D = Diode S = Schottky Diode A = low VF 60 = Current Rating [A] C = Common Cathode 150 = Reverse Voltage [V] PB = TO-220AB (3)
Ordering Standard
Part Number DSA60C150PB
Marking on Product DSA60C150PB
Delivery Mode Tube
Quantity Code No. 50 509198
Similar Part DSA50C150HB
Package TO-247AD (3)
Voltage class 150
Equivalent Circuits for Simulation
I V0
R0
Schottky
V 0 max R0 max
threshold voltage slope resistance *
0.55 2.8
* on die level
T VJ = 175 °C
V mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131031c
Outlines TO-220
E ØP 4
123
3x b2
3x b 2x e
L1 L
Q D
H1
A A1
C A2
DSA60C150PB
Dim.
A A1 A2
b b2
C D
E e H1
L L1
ØP Q
Millimeter Min. Max.
4.32 1.14 2.29
4.82 1.39 2.79
0.64 1.01 1.15 1.65
0.35 0.56 14.73 16.00
9.91 2.54 5.85
10.66 BSC 6.85
12.70 13.97 2.79 5.84
3.54 4.08 2.54 3.18
Inches Min. Max.
0.170 0.045 0.090
0.190 0.055 0.110
0.025 0.040 0.045 0.065
0.014 0.022 0.580 0.630
0.390 0.100 0.230
0.420 BSC 0.270
0.500 0.550 0.110 0.230
0.139 0.161 0.100 0.125
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IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131031c
DSA60C150PB
Schottky
100
10 TVJ=175°C
1000
1 150°C
IF 10
[A]
TVJ =
175°C 125°C
25°C
IR 125°C 0.1
[mA] 100°C
0.01 75°C
50°C 0.001
25°C
1 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VF [V]
Fig. 1 Maximum forward voltage drop characteristics
0.0001 0
50 100 VR [V]
150
Fig. 2 Typ. reverse current IR vs. reverse voltage VR
CT 100
[pF]
10 0
TVJ= 25°C 50 100 150
VR [V]
Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR
70 60
60
50
40 IF(AV)
30 [A]
20
10
DC d = 0.5
50
40 P(AV)
30 [W]
20
10
d= DC 0.5 0.33 0.25 0.17 0.08
0 0 40 80 120 160
TC [°C]
Fig. 4 Average forward current IF(AV) vs. case temperature TC
0 0 10 20 30 40 50
IF(AV) [A]
Fig. 5 Forward power loss characteristics
60
1
ZthJC 0.1
[K/W]
i Rthi [K/W] ti [s] 1 0.02326 0.0005 2 0.1539 0.011 3 0.2031 0.072 4 0.3892 0.34 5 0.08053 1.5
0.01 0.001
0.01
0.1 t [s]
1
10
Fig. 6 Transient thermal impedance junction to case at various duty cycles
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131031c
.