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DSA60C150PB Dataheets PDF



Part Number DSA60C150PB
Manufacturers IXYS
Logo IXYS
Description Schottky Diode
Datasheet DSA60C150PB DatasheetDSA60C150PB Datasheet (PDF)

Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA60C150PB 1 23 DSA60C150PB VRRM I FAV VF = 150 V = 2x 30 A = 0.8 V Backside: cathode Features / Advantages: ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching Applications: ● Rectifiers in switch mode power supplies (SMPS) ● Free wh.

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Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA60C150PB 1 23 DSA60C150PB VRRM I FAV VF = 150 V = 2x 30 A = 0.8 V Backside: cathode Features / Advantages: ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching Applications: ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters Package: TO-220 ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031c DSA60C150PB Schottky Symbol VRSM VRRM IR VF I FAV Definition Conditions max. non-repetitive reverse blocking voltage max. repetitive reverse blocking voltage reverse current, drain current VR = 150 V VR = 150 V forward voltage drop IF = 30 A IF = 60 A IF = 30 A IF = 60 A average forward current TC = 150°C rectangular d = 0.5 VF0 rF R thJC R thCH Ptot I FSM CJ threshold voltage slope resistance for power loss calculation only thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current junction capacitance t = 10 ms; (50 Hz), sine; VR = 0 V VR = 12 V f = 1 MHz TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C TVJ = 175°C Ratings min. typ. max. 150 150 450 5 0.93 1.09 0.80 0.98 30 Unit V V µA mA V V V V A TVJ = 175°C TC = TVJ = TVJ = 25°C 45°C 25°C 0.50 289 0.55 V 6 mΩ 0.85 K/W K/W 175 W 390 A pF IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031c Package TO-220 Symbol Definition I RMS TVJ T op Tstg Weight RMS current virtual junction temperature operation temperature storage temperature MD mounting torque F C mounting force with clip Conditions per terminal 1) DSA60C150PB Ratings min. typ. max. 35 -55 175 -55 150 -55 150 2 0.4 0.6 20 60 Unit A °C °C °C g Nm N Product Marking Part Number Logo Assembly Line Lot # Date Code XXXXXX Zyyww abcdef Part number D = Diode S = Schottky Diode A = low VF 60 = Current Rating [A] C = Common Cathode 150 = Reverse Voltage [V] PB = TO-220AB (3) Ordering Standard Part Number DSA60C150PB Marking on Product DSA60C150PB Delivery Mode Tube Quantity Code No. 50 509198 Similar Part DSA50C150HB Package TO-247AD (3) Voltage class 150 Equivalent Circuits for Simulation I V0 R0 Schottky V 0 max R0 max threshold voltage slope resistance * 0.55 2.8 * on die level T VJ = 175 °C V mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031c Outlines TO-220 E ØP 4 123 3x b2 3x b 2x e L1 L Q D H1 A A1 C A2 DSA60C150PB Dim. A A1 A2 b b2 C D E e H1 L L1 ØP Q Millimeter Min. Max. 4.32 1.14 2.29 4.82 1.39 2.79 0.64 1.01 1.15 1.65 0.35 0.56 14.73 16.00 9.91 2.54 5.85 10.66 BSC 6.85 12.70 13.97 2.79 5.84 3.54 4.08 2.54 3.18 Inches Min. Max. 0.170 0.045 0.090 0.190 0.055 0.110 0.025 0.040 0.045 0.065 0.014 0.022 0.580 0.630 0.390 0.100 0.230 0.420 BSC 0.270 0.500 0.550 0.110 0.230 0.139 0.161 0.100 0.125 1 23 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031c DSA60C150PB Schottky 100 10 TVJ=175°C 1000 1 150°C IF 10 [A] TVJ = 175°C 125°C 25°C IR 125°C 0.1 [mA] 100°C 0.01 75°C 50°C 0.001 25°C 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VF [V] Fig. 1 Maximum forward voltage drop characteristics 0.0001 0 50 100 VR [V] 150 Fig. 2 Typ. reverse current IR vs. reverse voltage VR CT 100 [pF] 10 0 TVJ= 25°C 50 100 150 VR [V] Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 70 60 60 50 40 IF(AV) 30 [A] 20 10 DC d = 0.5 50 40 P(AV) 30 [W] 20 10 d= DC 0.5 0.33 0.25 0.17 0.08 0 0 40 80 120 160 TC [°C] Fig. 4 Average forward current IF(AV) vs. case temperature TC 0 0 10 20 30 40 50 IF(AV) [A] Fig. 5 Forward power loss characteristics 60 1 ZthJC 0.1 [K/W] i Rthi [K/W] ti [s] 1 0.02326 0.0005 2 0.1539 0.011 3 0.2031 0.072 4 0.3892 0.34 5 0.08053 1.5 0.01 0.001 0.01 0.1 t [s] 1 10 Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031c .


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