HIGH CURRENT SWITCHING DIODE
CMPD1001 CMPD1001A CMPD1001S
HIGH CURRENT SWITCHING DIODE
Central
DESCRIPTION:
TM
Semiconductor Corp.
The CENTRAL SE...
Description
CMPD1001 CMPD1001A CMPD1001S
HIGH CURRENT SWITCHING DIODE
Central
DESCRIPTION:
TM
Semiconductor Corp.
The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high current capability. SOT-23 CASE The following configurations are available: CMPD1001 CMPD1001S CMPD1001A SINGLE DUAL, IN SERIES DUAL, COMMON ANODE MARKING CODE: L20 MARKING CODE: L21 MARKING CODE: L22
MAXIMUM RATINGS (TA=25oC) SYMBOL VR IF IFRM IRRM IFSM IFSM PD TJ,Tstg ΘJA UNITS V mA mA mA mA mA mW oC oC/W
Continuous Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Repetitive Reverse Current Forward Surge Current, tp=1 µs Forward Surge Current, tp=1 s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
90 250 600 600 6000 1000 350 -65 to +150 357
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL BVR IR IR VF TEST CONDITIONS IR=100 µA VR=90V VR=90V, TA=150oC IF=10mA MIN 90 MAX 100 100 0.75 UNIT V nA µA V
130
SYMBOL VF VF VF VF CT trr
TEST CONDITIONS MIN IF=50mA IF=100mA IF=200mA IF=400mA VR=0, f=1 MHz IF=IR=30mA, RECOV. TO 3.0mA, RL=100Ω
MAX 0.84 0.90 1.00 1.25 35 50
UNIT V V V V pF ns
All dimensions in inches (mm).
NO CONNECTION
A
C1
A2
C1
C2
C
CMPD1001
A1, C2
CMPD1001S
A1, A2
CMPD1001A
R2
131
...
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