Document
Rectifier Diode Avalanche Diode
DS 17 DSA 17
DSI 17 DSAI 17
VRRM = 800-1800 V IF(RMS)= 40 A IF(AV)M = 25 A
V RSM V
V x(BR)minÿ
V RRM
VV
900 -
800
1300 - 1200
1300 1700 1900
1300 1750 1950
1200 1600 1800
x Only for Avalanche Diodes
Anode
on stud
DS 17-08A DS 17-12A
DSA 17-12A DSA 17-16A DSA 17-18A
Cathode
on stud
DSI 17-08A DSI 17-12A
DSAI 17-12A DSAI 17-16A DSAI 17-18A
DO-203 AA
C DS DSA
A
A DSI DSAI
C
10-32UNF A = Anode C = Cathode
Symbol IF(RMS) IF(AV)M PRSM I
FSM
I2t
TVJ TVJM T
stg
Md Weight
Test Conditions
TVJ = TVJM Tcase = 125°C; 180° sine
DSA(I) types, TVJ = TVJM, tp = 10 ms
T VJ
= 45°C;
VR = 0
TVJ = TVJM VR = 0
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
TVJ = 45°C V =0
R
TVJ = TVJM VR = 0
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Mounting torque
Maximum Ratings
40 A 25 A
7 kW
370 A 400 A
300 A 320 A
680 A2s 660 A2s
450 A2s 430 A2s
-40...+180 180
-40...+180
°C °C °C
2.2-2.8 19-25 6
Nm lb.in.
g
Features q International standard package,
JEDEC DO-203 AA (DO-4) q Planar glassivated chips
Applications q Supplies for DC power equipment q DC supply for PWM inverter q Field supply for DC motors q Battery DC power supplies
Advantages q Space and weight savings q Simple mounting q Improved temperature and power
cycling q Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
Symbol
IR
V F
VT0 rT
RthJC RthJH
d S
dA a
Test Conditions
TVJ = TVJM; VR = VRRM
I
F
=
55
A;
T VJ
=
25°C
For power-loss calculations only TVJ = TVJM
DC current DC current
Creepage distance on surface Strike distance through air Max. allowable acceleration
Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
Characteristic Values
£ 4 mA
£ 1.36
V
0.85 V 8 mW
1.5 K/W 2.1 K/W
2.05 2.05 100
mm mm m/s2
1-2
DS 17 DSA 17
DSI 17 DSAI 17
100 A 80
IF 60
TVJ= 180°C TVJ= 25°C
40
20
typ. lim.
400 A 50Hz, 80% VRRM
300 IFSM
TVJ = 45°C
200 TVJ = 180°C
100
1000 8A020s VR = 0 V
600 I2t
400
TVJ = 45°C
TVJ = 180°C 200
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1V.6 1.8
VF
Fig. 1 Forward characteristics
50
W
40 PF
30
20 DC 180° sin 120°
10 60° 30°
0 10-3
10-2
10-1 s
t
Fig. 2 Surge overload current
IFSM: crest value, t: duration
100
RthJA : 2.8 K/W
3.2 K/W
4,8 K/W
6.3 K/W
8.5 K/W Cu 80x80
100 1
2 3 4 5 6 7 m8 s910 t
Fig. 3 I2t versus time (1-10 ms)
40 A
30 IF(AV)M
20
10
0
0 10 20 30 40 A 500 50 100 150 °C
IF(AV)M
Tamb
Fig. 4 Power dissipation versus forward current and ambient temperature
200
K/W ZthJH 2
0 0 50 100 150 °C Tcase
Fig. 5 Max. forward current at case temperature 180° sine
RthJH for various conduction angles d:
d
DC 180° 120°
60° 30°
RthJH (K/W)
2.10 2.23 2.33 2.53 2.72
1
0
10-3
10-2
10-1
100
Fig. 6 Transient thermal impedance junction to heatsink
101 s t
Constants for ZthJH calculation:
i
1.