Low-Loss Fast Recovery Diode
YG971S8R
Low-Loss Fast Recovery Diode
http://www.fujisemi.com FUJI Diode
Maximum Rating and Characteristics
Maximum r...
Description
YG971S8R
Low-Loss Fast Recovery Diode
http://www.fujisemi.com FUJI Diode
Maximum Rating and Characteristics
Maximum ratings (at Ta=25˚C unless otherwise specified.)
Item
Symbols
Repetitive peak reverse voltage
VRRM
Isolating voltage
Viso
Average forward current
IFAV
Non-repetitive forward surge current Operating junction temperature Storage temperature
IFSM Tj Tstg
Conditions -
Terminals-to-case, AC.1min 50Hz Square wave duty =1/2 Tc = 93˚C Sine wave, 10ms 1shot
-
-
Ratings 800 1500
5
60 150 -40 to +150
Units V V
A
A ˚C ˚C
Electrical characteristics Item Forward voltage Reverse current Reverse recovery time Thermal resistance
(at Ta=25˚C unless otherwise specified.)
Symbols
Conditions
VF IF =5 A
IR VR =VRRM
trr IF =0.1A, IR =0.2A, Irec =0.05A
Rth(j-c) Junction to case
Maximum 2.2 10 50 4.5
Units V µA µS
˚C/W
Mechanical characteristics Item Mounting torque Approximate mass
Conditions Recommended torque
-
Maximum 0.3 to 0.5
1.7
Units Nm
g
1
YG971S8R
Outline Drawings [mm]
8
FUJI Diode http://www.fujisemi.com
8
2
IF Forward Current (A) IR Reverse Current (µA)
YG971S8R
Forward Characteristic (typ.)
10
Tj=150°C Tj=125°C Tj=100°C Tj=25°C 1
0.1 0.5 1.0 1.5 2.0 2.5 3.0 VF Forward Voltage (V)
FUJI Diode http://www.fujisemi.com
Reverse Characteristic (typ.)
Tj=150°C 101
Tj=125°C
100 Tj=100°C
10-1
10-2 Tj=25°C
10-3 0
100 200 300 400 500 600 700 800 900 VR Reverse Voltage (V)
WF Forward Power Dissipation (W) PR Reverse Power Dissipation (W)
Forw...
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