Fast Recovery Epitaxial Diode
Fast Recovery Epitaxial Diode (FRED)
DSEI 60
IFAVM = 60 A VRRM = 1000 V trr = 35 ns
VRSM V
1000
VRRM V
1000
Type DS...
Description
Fast Recovery Epitaxial Diode (FRED)
DSEI 60
IFAVM = 60 A VRRM = 1000 V trr = 35 ns
VRSM V
1000
VRRM V
1000
Type DSEI 60-10A
TO-247 AD
AC
C A
A = Anode, C = Cathode
C
Symbol IFRMS IFAVM ÿÿx IFRM IFSM
I2t
TVJ TVJM Tstg Ptot Md Weight
Symbol
IR
VF
VT0 rT RthJC RthCK RthJA trr IRM
Test Conditions
TVJ = TVJM TC = 60°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine TVJ = 45°C t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TC = 25°C Mounting torque
Maximum Ratings
100 60
800
500 540
450 480
1250 1200
1000 950
-40...+150 150
-40...+150
189
0.8...1.2
6
A A A
A A
A A
A2s A2s
A2s A2s
°C °C °C
W
Nm
g
Test Conditions
Characteristic Values typ. max.
TVJ = 25°C TVJ = 25°C TVJ = 125°C
VR = VRRM VR = 0.8 VRRM VR = 0.8 VRRM
IF = 60 A;
TVJ = 150°C TVJ = 25°C
For power-loss calculations only TVJ = TVJM
0.25
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25°C VR = 540 V; IF = 60 A; -diF/dt = 480 A/ms L £ 0.05 mH; TVJ = 100°C
35 32
3 0.5 14
1.8 2.3
1.43 6.1
0.66
35
50
36
mA mA mA
V V
V mW
K/W K/W K/W
ns
A
Features
q International standard package JEDEC TO-247 AD
q Planar passivated chips q Very short recovery time q Extremely low switching losses q Low I -values
RM
q Soft recovery behaviour q Epoxy meets UL 94V-0
Applications
q Antiparallel diode for high f...
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