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DSEI2x30-04C Dataheets PDF



Part Number DSEI2x30-04C
Manufacturers IXYS
Logo IXYS
Description Fast Recovery Epitaxial Diode
Datasheet DSEI2x30-04C DatasheetDSEI2x30-04C Datasheet (PDF)

Fast Recovery Epitaxial Diode (FRED) DSEI 2x30-04/06 DSEI 2x31-04/06 IFAVM = 2x 30 A VRRM = 400/600 V trr = 35 ns VRSM V 440 640 VRRM V 400 600 Type DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C DSEI 2x 30 miniBLOC, SOT-227 B DSEI 2x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM IFRM ① IFSM I2t TVJ TVJM Tstg Ptot VISOL Md Weight TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 m.

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Fast Recovery Epitaxial Diode (FRED) DSEI 2x30-04/06 DSEI 2x31-04/06 IFAVM = 2x 30 A VRRM = 400/600 V trr = 35 ns VRSM V 440 640 VRRM V 400 600 Type DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C DSEI 2x 30 miniBLOC, SOT-227 B DSEI 2x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM IFRM ① IFSM I2t TVJ TVJM Tstg Ptot VISOL Md Weight TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TC = 25°C 50/60 Hz, RMS IISOL ≤ 1 mA Mounting torque Terminal connection torque (M4) 70 30 375 300 320 260 280 450 420 340 320 -40...+150 150 -40...+150 100 2500 1.5/13 1.5/13 30 A A A A A A A A2s A2s A2s A2s °C °C °C W V~ Nm/lb.in. Nm/lb.in. g Symbol Test Conditions Characteristic Values (per diode) typ. max. IR VF VT0 rT RthJC RthCK trr IRM TVJ = 25°C TVJ = 25°C TVJ = 125°C VR = VRRM VR = 0.8 • VRRM VR = 0.8 • VRRM IF = 30 A; TVJ = 150°C TVJ = 25°C For power-loss calculations only TVJ = TVJM IF = 1 A; -di/dt = 100 A/µs; VR = 30 V; TVJ = 25°C VR = 350 V; IF = 30 A; -diF/dt = 240 A/µs L ≤ 0.05 µH; TVJ = 100°C 0.05 35 10 100 50 7 1.4 1.6 1.01 7.1 1.25 50 11 µA µA mA V V V mΩ K/W K/W ns A ① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2017 IXYS All rights reserved E72873 Features ● International standard package miniBLOC (ISOTOP compatible) ● Isolation voltage 2500 V~ ● 2 independent FRED in 1 package ● Planar passivated chips ● Very short recovery time ● Extremely low switching losses ● Low IRM-values ● Soft recovery behaviour Applications ● Antiparallel diode for high frequency switching devices ● Anti saturation diode ● Snubber diode ● Free wheeling diode in converters and motor control circuits ● Rectifiers in switch mode power supplies (SMPS) ● Inductive heating and melting ● Uninterruptible power supplies (UPS) ● Ultrasonic cleaners and welders Advantages ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Low losses ● Operating at lower temperature or space saving by reduced cooling 20170315a 1-3 miniBLOC, SOT-227 B J Nut M4 DIN 934 Lens Head K Screw M4x8 Z DIN 7985 D H A G B 43 12 L P E F Q O U RC DSEI 2x30-04/06 DSEI 2x31-04/06 Millimeter Dim. min max A 31.50 31.88 B 7.80 8.20 C 4.09 4.29 D 4.09 4.29 E 4.09 4.29 F 14.91 15.11 G 30.12 30.30 H 37.80 38.23 J 11.68 12.22 K 8.92 9.60 L 0.74 0.84 M 12.50 13.10 N 25.15 25.42 O 1.95 2.13 P 4.95 6.20 Q 26.54 26.90 R 3.94 4.42 S 4.55 4.85 T 24.59 25.25 U -0.05 0.10 V 3.20 5.50 W 19.81 21.08 Z 2.50 2.70 Inches min max 1.240 1.255 0.307 0.323 0.161 0.169 0.161 0.169 0.161 0.169 0.587 0.595 1.186 1.193 1.488 1.505 0.460 0.481 0.351 0.378 0.029 0.033 0.492 0.516 0.990 1.001 0.077 0.084 0.195 0.244 1.045 1.059 0.155 0.167 0.179 0.191 0.968 0.994 -0.002 0.004 0.126 0.217 0.780 0.830 0.098 0.106 T V M W N S IXYS reserves the right to change limits, test conditions and dimensions © 2017 IXYS All rights reserved 20170315a 2-3 DSEI 2x30-04/06 DSEI 2x31-04/06 120 100 80 IF 60 [A] 40 TVJ = 150°C 100°C 25°C 20 0 012 VF [V] Fig. 1 Forward current vs. voltage drop 3.0 TVJ = 100°C VR = 350 V 2.5 2.0 Qr 1.5 [•C] 1.0 IF = 37 A 74 A 37 A 18.5 A max. 0.5 typ. 0.0 1 10 100 -diF /dt [A/•s] Fig. 2 Recovery charge versus -diF /dt 1000 40 TVJ = 100°C VR = 350 V 30 IRM 20 [A] IF = 37 A 74 A 37 A 18.5 A 10 max. typ. 0 0 200 400 600 -diF /dt [A/•s] Fig. 3 Peak reverse current versus -diF /dt 1.4 0.6 1.2 1.0 Kf 0.8 IRM 0.6 Qr 0.4 0 40 80 120 160 TJ [°C] Fig. 4 Dynamic parameters vs. junctin temperature 0.5 0.4 trr 0.3 [•s] 0.2 max. IF = 37 A 74 A 37 A 18.5 A 0.1 typ. 0.0 0 200 400 -diF /dt [A/•s] Fig. 5 Recovery time versus-diF /dt 2 1 20 1000 16 VFR 12 [V] 8 800 tfr 600 [ns] 400 4 VFR 200 tfr 00 600 0 200 400 600 -diF /dt [A/•s] Fig. 6 Peak forward voltage versus-diF /dt ZthJC 0.1 [K/W] 0.01 0.0001 0.001 0.01 0.1 t [s] 1 Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, test conditions and dimensions © 2017 IXYS All rights reserved 10 20170315a 3-3 .


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