DSEI2x31-12P

DSEI 2x31-12P Fast Recovery Epitaxial Diode (FRED) IFAVM = 2x28 A VRRM = 1200 V trr = 40 ns VRSM V 1200 VRRM V 1200 Type DSEI 2x 31-12P Symbol IFRMS IFAVM IFRM ① IFSM TVJ TVJM Tstg Ptot VISOL Md Weight Conditions Maximum Ratings (per diode) TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM 70 28 375 TVJ = 45°C; t = 10 ms (50 Hz), sine 200 -40...+150 150 -40...+150 A A A A °C °C °C TC = 25°C 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Mounting torque (M4) 100 2500 3000 1.5 - 2.0 14 - 18 W V~ V~ Nm lb.in. 18 g Symbol Conditions Characteristic Values (per diode) typ. max. IR VF VT0 rT RthJC RthCK trr IRM dS dA a TVJ = 25°C VR = VRRM TVJ = 25°C VR = 0.8 VRRM TVJ = 125°C VR = 0.8 VRRM IF = 30 A; TVJ = 150°C TVJ = 25°C For power-loss calculations only TVJ = TVJM IF = 1 A; -di/dt = 100 A/µs VR = 30 V; TVJ = 25°C VR = 540 V; IF = 30 A; -diF/dt = 240 A/µs L ≤ 0.05 µH; TVJ = 100°C Creeping distance on surface Creeping distance in air Allowable acceleration 0.05 40 750 250 7 2.20 2.55 1.65 18.2 1.25 50 16 18 min. 11.2 min. 11.2 max. 50 µA µA mA V V V mΩ K/W K/W ns A mm mm m/s² ① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2007 IXYS All rights reserved D5 Features 2 independent FRED in 1 package Isolation voltage 3000 V~ Planar passivated chips L...