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DSEI2x101-12P

IXYS

Fast Recovery Epitaxial Diode

Fast Recovery Epitaxial Diode (FRED) DSEI 2x101 IFAVM = 2x91 A VRRM = 1200 V trr = 40 ns VRSM V 1200 VRRM V 1200 Ty...


IXYS

DSEI2x101-12P

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Description
Fast Recovery Epitaxial Diode (FRED) DSEI 2x101 IFAVM = 2x91 A VRRM = 1200 V trr = 40 ns VRSM V 1200 VRRM V 1200 Type DSEI 2x 101-12P AC-1 IK-10 LN-9 VX-18 Symbol IFRMS IFAVM IFRM ① IFSM TVJ TVJM Tstg Ptot VISOL Md Weight Conditions Maximum Ratings (per diode) TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM 130 91 tbd TVJ = 45°C; t = 10 ms (50 Hz), sine 900 -40...+150 150 -40...+150 A A A A °C °C °C TC = 25°C 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Mounting torque (M4) 250 2500 3000 1.5 - 2.0 14 - 18 W V~ V~ Nm lb.in. 24 g Symbol Conditions Characteristic Values (per diode) typ. max. IR VF VT0 rT RthJC RthCK trr IRM dS dA a TVJ = 25°C VR = VRRM TVJ = 25°C VR = 0.8 VRRM TVJ = 125°C VR = 0.8 VRRM IF = 100 A; TVJ = 150°C TVJ = 25°C For power-loss calculations only TVJ = TVJM IF = 1 A; -di/dt = 400 A/µs VR = 30 V; TVJ = 25°C VR = 100 V; IF = 75 A; -diF/dt = 200 A/µs L ≤ 0.05 µH; TVJ = 100°C Creeping distance on surface Creeping distance in air Allowable acceleration 3.0 1.5 15 1.61 1.87 1.01 6.1 0.5 0.05 40 60 24 30 min. 11.2 min. 11.2 max. 50 mA mA mA V V V mΩ K/W K/W ns A mm mm m/s² ① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2001 IXYS All rights reserved D5 Features 2 independent FRED in 1 package Isolation voltage 3000 V~ Plana...




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