CMPT3904 CMPT3904G* NPN CMPT3906 CMPT3906G* PNP
SURFACE MOUNT SILICON COMPLEMENTARY TRANSISTORS
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CMPT3904 CMPT3904G*
NPN CMPT3906 CMPT3906G*
PNP
SURFACE MOUNT SILICON COMPLEMENTARY
TRANSISTORS
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DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are complementary silicon
transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose amplifier and switching applications.
SOT-23 CASE
* Device is Halogen Free by design
MARKING CODES: CMPT3904: C1A CMPT3906: C2A CMPT3904G*: CG1 CMPT3906G*: CG2
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA
CMPT3904 CMPT3906 CMPT3904G* CMPT3906G*
60 40
40 40
6.0 5.0
200
350
-65 to +150
357
UNITS V V V mA
mW °C °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL
TEST CONDITIONS
ICEV
VCE=30V, VEB=3.0V
IBL VCE=30V, VEB=3.0V
BVCBO
IC=10µA
BVCEO
IC=1.0mA
BVEBO
IE=10µA
VCE(SAT)
IC=10mA, IB=1.0mA
VCE(SAT)
IC=50mA, IB=5.0mA
VBE(SAT)
IC=10mA, IB=1.0mA
VBE(SAT)
IC=50mA, IB=5.0mA
hFE VCE=1.0V, IC=0.1mA
hFE VCE=1.0V, IC=1.0mA
hFE VCE=1.0V, IC=10mA
hFE VCE=1.0V, IC=50mA
hFE VCE=1.0V, IC=100mA
CMPT3904 CMPT3904G* MIN MAX
- 50 - 50 60 40 6.0 - 0.20 - 0.30 0.65 0.85 - 0.95 40 70 100 300 60 30 -
CMPT3906 CMPT3906G* MIN MAX - 50 - 50 40 40 5.0 - 0.25 - 0.40 0.65 0.85 - 0.95 60 80 100 300 60 30 -
UNITS nA nA V V V V V V V
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