DSEP60-12A

DSEP 60-12A HiPerFREDTM Epitaxial Diode with soft recovery IFAV = 60 A VRRM = 1200 V trr = 40 ns VRSM V 1200 VRRM V 1200 Type DSEP 60-12A TO-247 AD AC C A C (TAB) Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 90°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 14.5 A; L = 180 µH VA = 1.25·VR typ.; f = 10 kHz; repetitive TC = 25°C mounting torque typical Maximum Ratings 70 A 60 A 500 A 23 mJ 1.5 -55...+175 175 -55...+150 230 0.8...1.2 6 A °C °C °C W Nm g Symbol IR x VF y RthJC RthCH trr IRM Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 60 A; TVJ = 150°C TVJ = 25°C IF = 1 A; -di/dt = 300 A/ms; VR = 30 V; TVJ = 25°C VR = 100 V; IF = 130 A; -diF/dt = 100 A/ms TVJ = 100°C Characteristic Values typ. max. 650 mA 2.5 mA 1.74 V 2.66 V 0.65 0.25 K/W K/W 40 ns 7 14.3 A Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved A = Anode, C = Cathode, TAB = Cathode Features q International standard package q Planar passivated chips q Very short recovery time q Extremely low switching losses q Low IRM-values q Soft recovery behaviour q Epoxy meets UL 94V-0 Applications q Antiparallel diode for high frequency switching devices q Antisaturation diode q Snubber diode q Fre...