Epitaxial Diode
DSEP 60-12A
HiPerFREDTM Epitaxial Diode
with soft recovery
IFAV = 60 A VRRM = 1200 V trr = 40 ns
VRSM V
1200
VRRM V
...
Description
DSEP 60-12A
HiPerFREDTM Epitaxial Diode
with soft recovery
IFAV = 60 A VRRM = 1200 V trr = 40 ns
VRSM V
1200
VRRM V
1200
Type DSEP 60-12A
TO-247 AD
AC
C A
C (TAB)
Symbol IFRMS IFAVM
IFSM EAS
IAR TVJ TVJM Tstg Ptot Md Weight
Conditions
TC = 90°C; rectangular, d = 0.5
TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 14.5 A; L = 180 µH VA = 1.25·VR typ.; f = 10 kHz; repetitive
TC = 25°C mounting torque typical
Maximum Ratings
70 A 60 A
500 A 23 mJ
1.5
-55...+175 175
-55...+150
230
0.8...1.2
6
A
°C °C °C
W
Nm
g
Symbol
IR x
VF y
RthJC RthCH trr
IRM
Conditions
TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 60 A; TVJ = 150°C
TVJ = 25°C
IF = 1 A; -di/dt = 300 A/ms; VR = 30 V; TVJ = 25°C VR = 100 V; IF = 130 A; -diF/dt = 100 A/ms TVJ = 100°C
Characteristic Values typ. max.
650 mA 2.5 mA
1.74 V 2.66 V
0.65 0.25
K/W K/W
40 ns
7 14.3 A
Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
A = Anode, C = Cathode, TAB = Cathode
Features
q International standard package q Planar passivated chips q Very short recovery time q Extremely low switching losses q Low IRM-values q Soft recovery behaviour q Epoxy meets UL 94V-0
Applications
q Antiparallel diode for high frequency switching devices
q Antisaturation diode q Snubber diode q Fre...
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