Document
HiPerFREDTM Epitaxial Diode
ISOPLUS220TM
Electrically Isolated Back Surface
Preliminary Data Sheet
DSEA
VRSM V
600
VRRM V
600
Type
DSEA 59-06BC DSEC 59-06BC
1 DSEC
2
3
Symbol IFRMSc IFAVM IFSM EAS
IAR TVJ TVJM Tstg TL Ptot VISOL FC Weight
Symbol
IR d
VF e
RthJC RthCH trr
IRM
Conditions Lead current limit TC = 105°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 1.3 A; L = 180 µH VA = 1.5·VR typical; f = 10 kHz; repetitive
1.6 mm (0.063 in) from case for 10 s TC = 25°C 50/60 Hz RMS; IISOL ≤ 1 mA Mounting force typical
123
Maximum Ratings
45 30 200 0.2
A A
A
mJ
0.1 A
-40...+175 175
-40...+150
°C °C °C
260 °C
136 W
2500
V~
11...65 / 2.5...15 N / lb
2g
Conditions
Characteristic Values typ. max.
TVJ = 25°C TVJ = 150°C IF = 30 A;
VR = VRRM VR = VRRM TVJ = 150°C TVJ = 25°C
250 µA 2 mA
1.56 V 2.51 V
1.1 K/W 0.6 K/W
IF = 1 A; -di/dt = 200 A/µs; VR = 30 V; TVJ = 25°C
VR = 100 V; TVJ = 100°C
IF = 50 A; -diF/dt = 100 A/µs
30 4
ns A
Notes: Data given for TVJ = 25OC and per diode unless otherwise specified c Average current per diode may be limited by center lead RMS current limit when both diodes are conducting. d Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 % e Pulse test: pulse Width = 300 µs, Duty Cycle < 2.0 %
IFAV = VRRM = trr =
DSEA 59-06BC DSEC 59-06BC
2x30 A 600 V 35 ns
ISOPLUS220TM E153432
1 23
Isolated back surface*
Features
z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
z Low cathode to tab capacitance (<15pF) z Planar passivated chips z Very short recovery time z Extremely low switching losses z Low IRM-values z Soft recovery behaviour z Epoxy meets UL 94V-0
Applications
z Antiparallel diode for high frequency switching devices
z Antisaturation diode z Snubber diode z Free wheeling diode in converters
and motor control circuits z Rectifiers in switch mode power
supplies (SMPS) z Inductive heating z Uninterruptible power supplies (UPS) z Ultrasonic cleaners and welders
Advantages
z Avalanche voltage rated for reliable operation
z Soft reverse recovery for low EMI/RFI z Low IRM reduces:
- Power dissipation within the diode - Turn-on loss in the commutating
switch
See DSEP 29-06B data sheet for characteristic curves
IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved
DS98817A(07/03)
ISOPLUS220 Outline
DSEA 59-06BC DSEC 59-06BC
Notes:
DSEA 29 1. Lead 1 = Cathode 2. Lead 2 = Common Anode 3. Lead 3 = Cathode
DSEC 29 1. Lead 1 = Anode 2. Lead 2 = Common Cathode 3. Lead 3 = Anode
Back surface 4 is electrically isolated from leads 1, 2 and 3
.