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DSEA59-06BC Dataheets PDF



Part Number DSEA59-06BC
Manufacturers IXYS
Logo IXYS
Description Epitaxial Diode
Datasheet DSEA59-06BC DatasheetDSEA59-06BC Datasheet (PDF)

HiPerFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet DSEA VRSM V 600 VRRM V 600 Type DSEA 59-06BC DSEC 59-06BC 1 DSEC 2 3 Symbol IFRMSc IFAVM IFSM EAS IAR TVJ TVJM Tstg TL Ptot VISOL FC Weight Symbol IR d VF e RthJC RthCH trr IRM Conditions Lead current limit TC = 105°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 1.3 A; L = 180 µH VA = 1.5·VR typical; f = 10 kHz; repetitive 1.6 mm (0.063 in) f.

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HiPerFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet DSEA VRSM V 600 VRRM V 600 Type DSEA 59-06BC DSEC 59-06BC 1 DSEC 2 3 Symbol IFRMSc IFAVM IFSM EAS IAR TVJ TVJM Tstg TL Ptot VISOL FC Weight Symbol IR d VF e RthJC RthCH trr IRM Conditions Lead current limit TC = 105°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 1.3 A; L = 180 µH VA = 1.5·VR typical; f = 10 kHz; repetitive 1.6 mm (0.063 in) from case for 10 s TC = 25°C 50/60 Hz RMS; IISOL ≤ 1 mA Mounting force typical 123 Maximum Ratings 45 30 200 0.2 A A A mJ 0.1 A -40...+175 175 -40...+150 °C °C °C 260 °C 136 W 2500 V~ 11...65 / 2.5...15 N / lb 2g Conditions Characteristic Values typ. max. TVJ = 25°C TVJ = 150°C IF = 30 A; VR = VRRM VR = VRRM TVJ = 150°C TVJ = 25°C 250 µA 2 mA 1.56 V 2.51 V 1.1 K/W 0.6 K/W IF = 1 A; -di/dt = 200 A/µs; VR = 30 V; TVJ = 25°C VR = 100 V; TVJ = 100°C IF = 50 A; -diF/dt = 100 A/µs 30 4 ns A Notes: Data given for TVJ = 25OC and per diode unless otherwise specified c Average current per diode may be limited by center lead RMS current limit when both diodes are conducting. d Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 % e Pulse test: pulse Width = 300 µs, Duty Cycle < 2.0 % IFAV = VRRM = trr = DSEA 59-06BC DSEC 59-06BC 2x30 A 600 V 35 ns ISOPLUS220TM E153432 1 23 Isolated back surface* Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low cathode to tab capacitance (<15pF) z Planar passivated chips z Very short recovery time z Extremely low switching losses z Low IRM-values z Soft recovery behaviour z Epoxy meets UL 94V-0 Applications z Antiparallel diode for high frequency switching devices z Antisaturation diode z Snubber diode z Free wheeling diode in converters and motor control circuits z Rectifiers in switch mode power supplies (SMPS) z Inductive heating z Uninterruptible power supplies (UPS) z Ultrasonic cleaners and welders Advantages z Avalanche voltage rated for reliable operation z Soft reverse recovery for low EMI/RFI z Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch See DSEP 29-06B data sheet for characteristic curves IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved DS98817A(07/03) ISOPLUS220 Outline DSEA 59-06BC DSEC 59-06BC Notes: DSEA 29 1. Lead 1 = Cathode 2. Lead 2 = Common Anode 3. Lead 3 = Cathode DSEC 29 1. Lead 1 = Anode 2. Lead 2 = Common Cathode 3. Lead 3 = Anode Back surface 4 is electrically isolated from leads 1, 2 and 3 .


DSEC30-06B DSEA59-06BC DSEC59-06BC


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