CMPT918
NPN SILICON RF TRANSISTOR
Central
DESCRIPTION:
TM
Semiconductor Corp.
The CENTRAL SEMICONDUCTOR CMPT918 type...
CMPT918
NPN SILICON RF
TRANSISTOR
Central
DESCRIPTION:
TM
Semiconductor Corp.
The CENTRAL SEMICONDUCTOR CMPT918 type is an
NPN silicon RF
transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high frequency (VHF/UHF) amplifier and oscillator applications. Marking code is C3B. SOT-23 CASE MAXIMUM RATINGS (TA=25oC) SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg ΘJA UNITS V V V mA mW
oC oC/W
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
30 15 3.0 50 350 -65 to +150 357
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) hFE fT Cob Cob Cib Pout Gpe NF TEST CONDITIONS MIN VCB=15V IC=1.0µA 30 IC=3.0mA 15 IE=10µA 3.0 IC=10mA, IB=1.0mA IC=10mA, IB=1.0mA VCE=1.0V, IC=3.0mA 20 VCE=10V, IC=4.0mA, f=100MHz 600 VCB=0V, IE=0, f=1.0MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VCB=15V, IC=8.0mA, f=500MHz 30 VCB=12V, IC=6.0mA, f=200MHz 11 VCE=6.0V, IC=1.0mA, RS=50Ω, f=60MHz MAX 10 UNITS nA V V V V V MHz pF pF pF mW dB dB
0.4 1.0
3.0 1.7 2.0
6.0
154
All dimensions in inches (mm).
LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR
R2
155
...