NE
W
CMPTA29
Central
DESCRIPTION:
TM
Semiconductor Corp.
HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR
The CENTR...
NE
W
CMPTA29
Central
DESCRIPTION:
TM
Semiconductor Corp.
HIGH VOLTAGE
NPN SILICON DARLINGTON
TRANSISTOR
The CENTRAL SEMICONDUCTOR CMPTA29 is a Silicon
NPN Darlington
Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high voltage and high gain. Marking Code is C29. SOT-23 CASE MAXIMUM RATINGS: (TA=25oC) SYMBOL VCBO VCES VEBO IC PD TJ,Tstg ΘJA UNITS V V V mA mW
oC oC/W
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
100 100 12 500 350 -65 to +150 357
ELECTRICAL CHARACTERISTICS: (TA=25oC) SYMBOL ICES ICBO IEBO BVCES BVCBO BVEBO VCE(SAT) VCE(SAT) VBE(ON) TEST CONDITIONS VCE=80V VCB=80V VBE=10V IC=100µA IC=100µA IE=10µA IC=10mA, IB=10µA IC=100mA, IB=100mA VCE=5.0V, IC=100mA MIN MAX 500 100 100 UNITS nA nA nA V V V V V V
100 100 12 1.2 1.5 2.0
202
SYMBOL hFE hFE fT Cob
TEST CONDITIONS VCE=5.0V, IC=10mA VCE=5.0V, IC=100mA VCE=5.0V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz
MIN 10,000 10,000 125
MAX
UNITS
8.0
MHz pF
All dimensions in inches (mm).
LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR
R2 R1
203
...