Silicon Carbide Schottky Rectifier Bridge
in ISOPLUS i4-PACTM
Advanced Technical Information
FBS 16-06SC
VRRM = 600 V...
Silicon Carbide
Schottky Rectifier Bridge
in ISOPLUS i4-PACTM
Advanced Technical Information
FBS 16-06SC
VRRM = 600 V ID(AV)M = 11 A Cjunction = 21 pF
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Rectifier Bridge
Symbol
VRRM
IFAV ID(AV)M IFSM
Ptot
Conditions
TC = 90°C; sine 180° (per diode) TC = 90°C TVJ = 25°C; t = 10 ms; sine 50 Hz
TC = 25°C
(per diode)
Maximum Ratings
600 V
5A 11 A 20 A
27 W
Symbol
VF
I
R
CJ RthJC RthJS
Conditions
IF = 6 A;
V =V ; R RRM
VR = 400 V; (per diode)
TVJ = 25°C TVJ = 125°C
TVJ = 25°C TVJ = 125°C
TVJ = 125°C
Characteristic Values (TVJ = 25°C, unless otherwise specified)
min. typ. max.
1.5 1.8 V 1.6 V
0.2 mA 0.05 mA
21 pF
5.6 K/W 8.6 K/W
Features
Silicon Carbide
Schottky Diodes - no reverse recovery at turn off - only charge of junction capacity - soft turn off waveform - no forward recovery at turn on - switching behaviour independent of temperature - low leakage current
ISOPLUS i4-PAC(TM) package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - high reliability - industry standard outline
Applications
output rectifiers of high end switched mode power supplies
other high frequency rectifiers
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
0202
IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved
1-2
FBS 16-06SC
Component
Symbol
TVJ Tstg VISOL FC
Conditions
IISOL ≤ 1 mA; 50/60 Hz...
