STF80N10F7

STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7 N-channel 100 V, 0.008 Ω typ., 80 A STripFET™ VII DeepGATE™ 2 Power MOSFETs in DPAK, TO-220FP, H PAK-2 and TO-220 Datasheet - production data TAB 3 1 DPAK TAB 2 3 1 H2PAK-2 3 2 1 TO-220FP TAB 3 2 1 TO-220 Features Order codes VDS @ RDS(on) TJmax max STD80N10F7 0.01 Ω STF80N10F7 0.01 Ω 100 V STH80N10F7-2 0.0095 Ω STP80N10F7 0.01 Ω ID 70 A 40 A 80 A PTOT 85 W 30 W 110 W Extremely low gate charge Ultra low on-resistance Low gate input resistance Figure 1. Internal schematic diagram '7$% '7$% *6 *6 Applications Switching applications Description th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. '3$.72DQG 72)3QR7$% +3$. $0Y Order codes STD80N10F7 STF80N10F7 STH80N10F7-2 STP80N10F7 Table 1. Device summary Marking Package 80N10F7 DPAK TO-220FP 2 H PAK-2 TO-220 Packaging Tape and reel Tube Tape and reel Tube February 2014 This is information on a product in full production. DocID025865 Rev 1 1/25 www.st.com Contents Contents STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electr...