Document
STD80N4F6, STU80N4F6
N-channel 40 V, 5.5 mΩ typ., 80 A STripFET™ VI DeepGATE™ Power MOSFET in DPAK and IPAK packages
Datasheet − production data
Features
TAB
3 1
DPAK
TAB
IPAK
3
2 1
Figure 1. Internal schematic diagram
$ 4!"
'
Order codes STD80N4F6 STU80N4F6
VDS 40 V
RDS(on) max ID
6.0 mΩ 6.3 mΩ
80 A
• Low gate charge • Very low on-resistance • High avalanche ruggedness
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.
3
!-V
Order codes STD80N4F6 STU80N4F6
Table 1. Device summary
Marking
Package
80N4F6
DPAK IPAK
March 2013
This is information on a product in full production.
DocID023839 Rev 3
Packaging Tape and reel
Tube
1/18
www.st.com
18
Contents
Contents
STD80N4F6, STU80N4F6
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18 DocID023839 Rev 3
STD80N4F6, STU80N4F6
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
VDS VGS ID(1) ID(1) IDM (2) PTOT
IAV
EAS
Drain-source voltage
Gate-source voltage
Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed)
Total dissipation at TC = 25 °C Avalanche current, repetitive or not-repetitive (pulse width limited by TJmax) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAV, VDD = 25 V) Derating factor
Tstg Storage temperature Tj Max. operating junction temperature
1. Current limited by package. 2. Pulse width limited by safe operating area
40 ± 20 80(1) 56(1) 320(1) 70
40
149
0.47
-55 to 175
Symbol
Table 3. Thermal data
Parameter
Value DPAK
IPAK
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max Rthj-pcb(1) Thermal resistance junction-ambient max
1. When mounted on FR-4 board of inch2, 2 oz Cu
2.14 100
50
Unit V V A A A W A
mJ W/°C
°C °C
Unit
°C/W °C/W °C/W
DocID023839 Rev 3
3/18
Electrical characteristics
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On /off states Test conditions
V(BR)DSS
Drain-source breakdown voltage
ID = 250 µA, VGS = 0
IDSS IGSS VGS(th) RDS(on)
Zero gate voltage
VDS = 40 V
drain current (VGS = 0) VDS = 40 V, TC=125 °C
Gate-body leakage current (VDS = 0)
VGS = ± 20 V
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source on-resistance
VGS = 10 V, ID = 40 A for DPAK
for IPAK
STD80N4F6, STU80N4F6
Min. Typ. Max. Unit 40 V
1 µA 100 µA ± 100 nA 2 4V 5.5 6 mΩ 5.8 6.3 mΩ
Symbol
Parameter
Ciss Coss Crss
Qg Qgs Qgd
Input capacitance
Output capacitance
Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge
Table 5. Dynamic Test conditions
VDS = 25 V, f = 1 MHz, VGS = 0
VDD = 20 V, ID = 80 A, VGS = 10 V (see Figure 14)
Min. -
Typ. 2150 335
Max. Unit - pF - pF
- 160 - pF
- 36 - nC - 11 - nC - 9 - nC
Symbol
Parameter
td(on) tr
td(off) tf
Turn-on delay time Rise time Turn-off delay time Fall time
Table 6. Switching times Test conditions
VDD = 20 V, ID = 40 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15)
Min. -
Typ. 10.5 7.6 46.1 11.9
Max Unit - ns - ns - ns - ns
4/18 DocID023839 Rev 3
STD80N4F6, STU80N4F6
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
- 80 A
ISDM (1) Source-drain current (pulsed)
- 320 A
VSD (2) Forward on voltage
ISD = 40 A, VGS = 0
-
1.3 V
trr Reverse recovery time
- 41.1
Qrr Reverse recovery charge
ISD = 80 A, di/dt = 100 A/µs VDD = 32 V (see Figure 17)
-
43.6
IRRM Reverse recovery current
- 2.1
ns nC A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID023839 Rev 3
5/18
Electrical characteristics
STD80N4F6, STU80N4F6
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area
ID (A)
100
OpLeirmaittieodn binytmhisaxarReDaS(ison)
AM15599v1
100µs
Figure 3. Thermal impedance
10
1
0.1 0.1
Tj=175°C Tc=25°C
Single pulse
1ms 10ms
1 10 VDS(V)
Figure 4. Output characteristics
ID AM15600v1 (A)
VGS= 7, 8, 9, 10 V 200
VGS= 6 V 150
100
50
0 0
VGS= 5 V.