IS66WVE2M16EALL

IS66/67WVE2M16EALL/EBLL/ECLL IS66/67WVE2M16TALL/TBLL/TCLL 32Mb Async/Page PSRAM SEPTEMBER 2022 Overview The IS66/67WVE2M16EALL/BLL/CLL and IS66/67WVE2M16TALL/BLL/CLL are integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core. Features ⚫ Asynchronous and page mode interface ⚫ Dual voltage rails for optional performance  ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V  BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V  CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V ⚫ Page mode read access  Interpage Read access : 60ns, 70ns  Intrapage Read access : 25ns ⚫ Low Power Consumption  Asynchronous Operation < 30 mA  Intrapage Read < 23mA  Standby < 180 µA (max.)  Deep power-down (DPD)  ALL/CLL: < 3µA (Typ)  BLL: < 10µA (Typ) ⚫ Low Power Feature  Temperature Controlled Refresh  Partial Array Refresh  Deep power-down (DPD) mode ⚫ Operating temperature Range Industrial: -40°C~85°C Automotive A1: -40°C~85°C Automotive A2: -40°C~105°C ⚫ Package: 48-ball TFBGA Copyright © 2022 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products...