ULTRA LOW POWER CMOS STATIC RAM
IS62WV2568EALL IS62/65WV2568EBLL
256Kx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
MARCH 2018
KEY FEATURES
High-s...
Description
IS62WV2568EALL IS62/65WV2568EBLL
256Kx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
MARCH 2018
KEY FEATURES
High-speed access time: 45ns, 55ns CMOS low power operation
– Operating Current: 18 mA (max) at 85°C – CMOS Standby Current: 5.4uA (typ) at 25°C TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62WV2568EALL) – 2.2V-3.6V VDD (IS62/65WV2568EBLL) Three state outputs Industrial and Automotive temperature support
Lead-free available
DESCRIPTION
The ISSI IS62/65WV2568EALL/EBLL are high-speed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices.
When CS1# is HIGH (deselected) or when CS2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE#) controls both writing and reading of the memory.
The IS62/65WV2568EALL/EBLL are packaged in the JEDEC standard 32-pin TSOP (TYPE I), sTSOP (TYPE I), and 36-pin mini BGA..
FUNCTIONAL BLOCK DIAGRAM
A0 – A17
VDD GND I/O0 – I/O7
DECODER
256K x 8 MEMORY ARRAY
I/O DATA CIRCUIT
COLUMN I/O
CS2 CS1#
OE# WE#
CONTROL CIRCUIT
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