IS65WV51216EBLL

IS62/65WV51216EALL IS62/65WV51216EBLL 512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM NOVEMBER 2014 KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating – 12 µW (typical) CMOS standby  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive temperature (-40oC to +125oC) BLOCK DIAGRAM DESCRIPTION The IS62WV51216EALL/ IS62WV51216EBLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using 's high- performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When is HIGH (deselected) or when CS2 is low (deselected) or when is low , CS2 is high and both and are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable controls both writing and reading of the memory. A data byte allows Upper Byte and Lower Byte ( access. The IS62WV51216EALL and IS62WV51216EBLL are packaged in the JEDEC standard 48-pin mini BGA (6mm x8mm), 44-Pin TSOP (TYPE II) and 48-pin TSOP (TYPE l). Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to...