IS65WV12816ALL

IS65WV12816ALL IS65WV12816BLL ISSI® 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM PRELIMINARY INFORMATION JUNE 2006 FEATURES High-speed access time: 55ns, 70ns CMOS low power operation: 36 mW (typical) operating 9 µW (typical) CMOS standby TTL compatible interface levels Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL) Fully static operation: no clock or refresh required Three state outputs Data control for upper and lower bytes 2CS Option Available Temperature Offerings: Option A: 0 to 70oC Option A1: –40 to +85oC Option A2: –40 to +105oC Option A3: –40 to +125oC Lead-free available DESCRIPTION The ISSI IS65WV12816ALL/ IS65WV12816BLL are high- speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1 is LOW, CS2 is HIGH and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS65WV12816ALL and IS65WV12816BLL are packged in t...