IS62WV20488EBLL

IS62/65WV20488EALL IS62/65WV20488EBLL 2Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM JANUARY 2015 FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 30 mW (typical) operating – 12 µW (typical) CMOS standby  TTL compatible interface levels  Single power supply –1.65V—1.98V Vdd (62/65WV20488EALL) – 2.2V--3.6V Vdd (62/65WV20488EBLL)  Fully static operation: no clock or refresh required  Industrial (-40oC to +85oC) and Automotive (-40oC to +125oC) temperature support BLOCK DIAGRAM DESCRIPTION The ISSI IS62WV20488EALL/BLL and IS65WV20488EALL/BLL are high-speed, 16M bit static RAMs organized as 2M words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When is HIGH (deselected) or when CS2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable controls both writing and reading of the memory. The IS62WV20488EALL/BLL and IS65WV20488EALL/BLL are packaged in the JEDEC standard 48-pin mini BGA (6mm x 8mm). Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability ar...