IS67WV51216EBLL

IS66WV51216EALL IS66/67WV51216EBLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM SEPTEMBER 2022 Features  High-Speed access time : - 70ns ( IS66WV51216EALL ) - 60ns (IS66/67WV51216EBLL )  CMOS Lower Power Operation  Single Power Supply - VDD =1.7V~1.95V( IS66WV51216EALL ) - VDD =2.5V~3.6V (IS66/67WV51216EBLL )  Three State Outputs  Data Control for Upper and Lower bytes  Lead-free Available DESCRIPTION The ISSI IS66WV51216EALL and IS66/67WV51216EBLL are high-speed,8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI’s high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1# is HIGH (deselected) or when CS2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE#) controls both writing and reading of the memory. A data byte allows Upper Byte (UB#) and Lower Byte (LB#) access. FUNCTIONAL BLOCK DIAGRAM The IS66WV51216 EALL and IS66/67WV51216EBLL are packaged in the JEDEC standard 48-ball mini BGA (6mm x 8mm) and 44-Pin TSOP(TYPE-II). The device is also available for die sales. A0~A18 VDD GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte Address Decode Logic I/O DATA CIRCUIT COLUMN I/O 512K X 16 DRAM Memory Array CS2 CS...