32Mb Async/Page/Burst CellularRAM
IS66WVC2M16ALL
32Mb Async/Page/Burst CellularRAM 1.5
Overview The IS66WVC2M16ALL is an integrated memory device containi...
Description
IS66WVC2M16ALL
32Mb Async/Page/Burst CellularRAM 1.5
Overview The IS66WVC2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion of the array and Temperature Controlled Refresh. Both these modes reduce standby current drain. The device can be operated in a standard asynchronous mode and high performance burst mode. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.
Features
Single device supports asynchronous , page, and burst operation
Mixed Mode supports asynchronous write and synchronous read operation
Dual voltage rails for optional performance VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
Asynchronous mode read access : 70ns Interpage Read access : 70ns Intrapage Read access : 20ns
Burst mode for Read and Write operation 4, 8, 16,32 or Continuous
Low Power Consumption Asynchronous Operation < 25 mA Intrapage Read < 18mA Burst operation < 35 mA (@104Mhz) Standby < 150 uA(max.) Deep power-down (DPD) < 3uA (Typ)
Low Power Feature Reduced Array Refresh Temperature Controlled Refresh Deep power-down (DPD) mode
Operation Frequency up to 104Mhz Operating temperature Range
Industrial -40°C~85°C Package: 54-ball VFBGA
Copyright © 2011 Integrated Silicon Solution, Inc. All ...
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