IS61QDPB44M18B2

IS61QDPB44M18B/B1/B2 IS61QDPB42M36B/B1/B2 4Mx18, 2Mx36 72Mb QUADP (Burst 4) SYNCHRONOUS SRAM (2.5 Cycle Read Latency) DECEMBER 2015 FEATURES  2Mx36 and 4Mx18 configuration available.  On-chip Delay Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface for read and write input ports.  2.5 cycle read latency.  Fixed 4-bit burst for read and write operations.  Clock stop support.  Two input clocks (K and K#) for address and control registering at rising edges only.  Two echo clocks (CQ and CQ#) that are delivered simultaneously with data.  Data Valid Pin (QVLD).  +1.8V core power supply and 1.5, 1.8V VDDQ, used with 0.75, 0.9V VREF.  HSTL input and output interface.  Registered addresses, write and read controls, byte writes, data in, and data outputs.  Full data coherency.  Boundary scan using limited set of JTAG 1149.1 functions.  Byte write capability.  Fine ball grid array (FBGA) package 13mm x 15mm & 15mm x 17mm body size 165-ball (11 x 15) array  Programmable impedance output drivers via 5x user-supplied precision resistor. DESCRIPTION The 72Mb IS61QDPB42M36B/B1/B2 and IS61QDPB44M18B/B1/B2 are synchronous, highperformance CMOS static random access memory (SRAM) devices. These SRAMs have separate I/Os, eliminating the need for high-speed bus turnaround. The rising edge of K clock initiates...