Document
IS61WV10248EDBLL IS64WV10248EDBLL
1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
FEBRUARY 2013
FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for
greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh
required • TTL compatible inputs and outputs • Packages available:
– 48-ball miniBGA (6mm x 8mm) – 44-pin TSOP (Type II) • Industrial and Automotive Temperature Support • Lead-free available
DESCRIPTION
The ISSI IS61/64WV10248EDBLL are very high-speed,
low power, 1M-word by 8-bit CMOS static RAM. The
IS61/64WV10248EDBLL are fabricated using ISSI's
high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.
When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
The IS61/64WV10248EDBLL operate from a single power supply and all inputs are TTL-compatible.
The IS61/64WV10248EDBLL are available in 48 ball mini BGA (6mm x 8mm) and 44-pin TSOP (Type II) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A19
Decoder
Memory Array (1024Kx8)
ECC Array (1024Kx4)
IO0-7
8
I/O Data Circuit
8
12 ECC
84 Column I/O
/CE /OE /WE
Control Circuit
Copyright © 2013 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com 1
Rev. A 02/20/2013
IS61WV10248EDBLL IS64WV10248EDBLL
PIN CONFIGURATION 48-pin Mini BGA (B) (6mm x 8mm)
1 23 45 6
A NC OE A0 A1 A2 NC B NC NC A3 A4 CE I/O0 C NC NC A5 A6 I/O1 I/O2 D GND NC A17 A7 I/O3 VDD E VDD NC NC A16 I/O4 GND F NC NC A14 A15 I/O5 I/O6 G NC NC A12 A13 WE I/O7 H A18 A8 A9 A10 A11 A19
PIN DESCRIPTIONS
A0-A19 Address Inputs CE Chip Enable Input OE Output Enable Input WE Write Enable Input I/O0-I/O7 Data Input / Output Vdd Power GND Ground NC No Connection
44-pin TSOP (Type II )
NC 1 NC 2 A0 3 A1 4 A2 5 A3 6 A4 7 CE 8 I/O0 9 I/O1 10 VDD 11 GND 12 I/O2 13 I/O3 14 WE 15 A5 16 A6 17 A7 18 A8 19 A9 20 NC 21 NC 22
44 NC 43 NC 42 NC 41 A18 40 A17 39 A16 38 A15 37 OE 36 I/O7 35 I/O6 34 GND 33 VDD 32 I/O5 31 I/O4 30 A14 29 A13 28 A12 27 A11 26 A10 25 A19 24 NC 23 NC
2 Integrated Silicon Solution, Inc. — www.issi.com
Rev. A 02/20/2013
IS61WV10248EDBLL IS64WV10248EDBLL
TRUTH TABLE
Mode
WE
Not Selected X (Power-down)
Output Disabled H
Read
H
Write
L
CE OE I/O Operation Vdd Current
H X
High-Z
Isb1, Isb2
L H L L L X
High-Z Dout Din
Icc Icc Icc
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
Unit
Vterm Terminal Voltage with Respect to GND –0.5 to Vdd + 0.5 V
Vdd
Vdd Relates to GND
–0.3 to 4.0
V
Tstg
Storage Temperature
–65 to +150
°C
Pt
Power Dissipation
1.0 W
Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
CAPACITANCE(1,2)
Symbol Parameter
Conditions Max. Unit
Cin
Input Capacitance
Vin = 0V
6 pF
CI/O
Input/Output Capacitance
Vout = 0V
8
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: Ta = 25°C, f = 1 MHz, Vdd = 3.3V.
pF
Integrated Silicon Solution, Inc. — www.issi.com 3
Rev. A 02/20/2013
IS61WV10248EDBLL IS64WV10248EDBLL
OPERATING RANGE (Vdd)1
Range
Ambient Temperature
Industrial
–40°C to +85°C
Automotive (A1) –40°C to +85°C
Automotive (A3) –40°C to +125°C
Note:
1. Contact SRAM@i.