256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25632ALL/ALS IS61WV25632BLL/BLS IS64WV25632BLL/BLS
256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SU...
Description
IS61WV25632ALL/ALS IS61WV25632BLL/BLS IS64WV25632BLL/BLS
256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
MAY 2023
FEATURES
High-speed access times: 8, 10, 20 ns High-performance, low-power CMOS process Multiple center power and ground pins for greater
noise immunity Easy memory expansion with CE and OE options CE power-down Fully static operation: no clock or refresh
required TTL compatible inputs and outputs Single power supply
Vdd 1.65V to 2.2V (IS61WV25632Axx) speed = 20ns for Vdd 1.65V to 2.2V Vdd 2.4V to 3.6V (IS61/64WV25632Bxx) speed = 10ns for Vdd 2.4V to 3.6V speed = 8ns for Vdd 3.3V + 5% Packages available: – 90-ball miniBGA (8mm x 13mm) Industrial and Automotive Temperature Support
DESCRIPTION The ISSI IS61WV25632Axx/Bxx and IS64WV25632Bxx
are high-speed, 8M-bit static RAMs organized as 256K
words by 32 bits. It is fabricated using ISSI's high-per-
formance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory.
The device is packaged in the JEDEC standard 90-ball BGA (8mm x 13mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A17
VDD...
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