B1568

Transistors Power Transistor (−80V, −4A) 2SB1568 2SB1568 z Features zExternal dimensions (Unit : mm) 1) Available in TO-220 FN package 2) Darling connection provides high 10.0 φ3.2 4.5 2.8 dc current gain (hFE) 3) Damper diode is incorporated m4) Built in resistors between base and emitter o5) Two millimeters lower than TO-220 FP .cwhich allows higher density mounting 6) Complementary pair with 2SD2399 15.0 12.0 8.0 ROHM : TO-220FN 14.0 5.0 1.2 1.3 0.8 2.54 2.54 (1) (2) (3) 0.75 (1) Base (Gate) 2.6 (2) Collector (Drain) (3) Emitter (Sourse) UzApplications t4Power amplifler ezAbsolute maximum rating (Ta=25°C) eParameter hCollector-base voltage Collector-emitter voltage SEmitter-base voltage taCollector current Collector dissipation aJunction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits −80 −80 −7 −4 −6 2 30 150 −55 to +150 Unit V V V A(DC) A(Pulse) ∗ W(Ta=25°C) W(Tc=25°C) °C °C zEquivalent circuit C B R1 R2 E :R1= 3kΩ B : Base :R2=300Ω C : Collector E : Emitter w.DzElectrical characteristics (unless otherwise noted, Ta=25°C) Parameter Symbol wCollector−base breakdown voltage BVCBO wCollector−emitter breakdown voltage BVCEO Collector cutoff current BVEBO omEmitter cutoff current ICBO .cDC current gain Collector−emitter Ubreakdown voltage t4Collector−emitter saturation voltage eeTransition frequency IEBO hFE ∗1 ∗1 VCE(sat) fT∗1 ∗2 hOutput capacitance Cob S∗1 Measured using pulse current. www.Data∗2 Transitio...