DATA SHEET
SILICON POWER TRANSISTOR
2SD1692
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FEATURES
• High DC...
DATA SHEET
SILICON POWER
TRANSISTOR
2SD1692
NPN SILICON EPITAXIAL
TRANSISTOR (DARLINGTON CONNECTION)
FEATURES
High DC current gain due to Darlington connection Large current capacity and low VCE(sat) Large power dissipation TO-126 type power
transistor Complementary
transistor: 2SB1149
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Total power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO IC(DC) IC(pulse)* PT (Ta = 25°C) PT (Tc = 25°C)
Tj Tstg
* PW ≤ 10 ms, duty cycle ≤ 50%
Ratings 150 100 8.0 ±3.0 ±5.0 1.3 15 150
−55 to +150
Unit V V V A A W W °C °C
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector to emitter voltage Collector cutoff current Collector cutoff current DC current gain DC current gain Collector saturation voltage Base saturation voltage Turn-on time Storage time Fall time
VCEO(SUS) ICBO ICEO hFE1** hFE2**
VCE(sat)** VBE(sat)**
ton tstg tf
IC = 3.0 A, IB = 3.0 mA, L = 1.0 mH VCB = 100 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 2.0 V, IC = 1.5 A VCE = 2.0 V, IC = 3.0 A IC = 1.5 A, IB = 1.5 mA IC = 1.5 A, IB = 1.5 mA IC = 1.5 A IB1 = −IB2 = 1.5 mA RL = 27 Ω, VCC ≅ 40 V
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2%/per pulsed
hFE CLASSIFICATION
Marking hFE1
M 2,000 to 5,000
L 4,000 to 12,000
K...