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IS61QDP2B251236A Dataheets PDF



Part Number IS61QDP2B251236A
Manufacturers ISSI
Logo ISSI
Description 18Mb QUADP (Burst 2) Synchronous SRAM
Datasheet IS61QDP2B251236A DatasheetIS61QDP2B251236A Datasheet (PDF)

IS61QDP2B21M18A/A1/A2 IS61QDP2B251236A/A1/A2 1Mx18, 512Kx36 18Mb QUADP (Burst 2) Synchronous SRAM (2.0 CYCLE READ LATENCY) OCTOBER 2014 FEATURES  512Kx36 and 1Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with EARLY write operation.  Double Data Rate (DDR) interface for read and write input ports.  2.0 Cycle read latency.  Fixed 2-.

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IS61QDP2B21M18A/A1/A2 IS61QDP2B251236A/A1/A2 1Mx18, 512Kx36 18Mb QUADP (Burst 2) Synchronous SRAM (2.0 CYCLE READ LATENCY) OCTOBER 2014 FEATURES  512Kx36 and 1Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with EARLY write operation.  Double Data Rate (DDR) interface for read and write input ports.  2.0 Cycle read latency.  Fixed 2-bit burst for read and write operations.  Clock stop support.  Two input clocks (K and K#) for address and control registering at rising edges only.  Two echo clocks (CQ and CQ#) that are delivered simultaneously with data.  Data valid pin (QVLD).  +1.8V core power supply and 1.5, 1.8V VDDQ, used with 0.75, 0.9V VREF.  HSTL input and output interface.  Registered addresses, write and read controls, byte writes, data in, and data outputs.  Full data coherency.  Boundary scan using limited set of JTAG 1149.1 functions.  Byte Write capability.  Fine ball grid array (FBGA) package option: 13mmx15mm and 15mmx17mm body size 165-ball (11 x 15) array  Programmable impedance output drivers via 5x user-supplied precision resistor.  ODT (On Die Termination) feature is supported optionally on data input, K/K#, and BWx#.  The end of top mark (A/A1/A2) is to define options. : Don’t care ODT function and pin connection 1 : Option1 2 : Option2 Refer to more detail description at page 6 for each ODT option. DESCRIPTION The and are synchronous, high- performance CMOS static random access memory (SRAM) devices. These SRAMs have separate I/Os, eliminating the need for high-speed bus turnaround. The rising edge of K clock initiates the read/write operation, and all internal operations are self-timed. Refer to the for a description of the basic operations of these SRAMs. Read and write addresses are registered on alternating rising edges of the K clock. Read and write performed in double data rate. The following are registered internally on the rising edge of the K clock:  Read address  Read enable  Write enable  Data-in for early writes The following are registered on the rising edge of the K# clock:  Write address  Byte writes  Data-in for second burst addresses Byte writes can change with the corresponding data-in to enable or disable writes on a per-byte basis. An internal write buffer enables the data-ins to be registered half a cycle earlier than the write address. The first data-in burst is clocked at the same time as the write command signal, and the second burst is timed to the following rising edge of the K# clock. During the burst read operation, the data-outs from the first bursts are updated from output registers of the second rising edge of the K# clock (starting two cycles later after read command). The data-outs from the second bursts are updated with the third rising edge of the K clock. The K and K# clocks are used to time the data-outs. The device is operated with a single +1.8V power supply and is compatible with HSTL I/O interface. Copyright © 2010 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and Inc.t)epgotreantitael dliabSiliityliocf IontnegrSatoedluSitliicoonnS,oIluntiocn.,-Inwc iswawde.qiusasteil.ycporomtected under the circumstances Rev. B 10/02/2014 1 IS61QDP2B21M18A/A1/A2 IS61QDP2B251236A/A1/A2 Package ballout and description x36 FBGA Ball Configuration (Top View) 1 2 3 4 5 6 7 8 9 10 A CQ# NC/SA1 NC/SA1 W# BW2# K# BW1# R# NC/SA1 NC/SA1 B Q27 Q18 D18 SA BW3# K BW0# SA D17 Q17 C D27 Q28 D19 VSS SA SA SA VSS D16 Q7 D D28 D20 Q19 VSS VSS VSS VSS VSS Q16 D15 E Q29 D29 Q20 VDDQ VSS VSS VSS VDDQ Q15 D6 F Q30 Q21 D21 VDDQ VDD VSS VDD VDDQ D14 Q14 G D30 D22 Q22 VDDQ VDD VSS VDD VDDQ Q13 D13 H Doff# VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF J D31 Q31 D23 VDDQ VDD VSS VDD VDDQ D12 Q4 K Q32 D32 Q23 VDDQ VDD VSS VDD VDDQ Q12 D3 L Q33 Q24 D24 VDDQ VSS VSS VSS VDDQ D11 Q11 M D33 Q34 D25 VSS VSS VSS VSS VSS D10 Q1 N .


IS61QDP2B21M18A2 IS61QDP2B251236A IS61QDP2B251236A1


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