IS61QDP2B42M18A2

IS61QDP2B42M18A/A1/A2 IS61QDP2B41M36A/A1/A2 2Mx18, 1Mx36 36Mb QUADP (Burst 4) SYNCHRONOUS SRAM (2.0 Cycle Read Latency) JANUARY 2015 FEATURES  1Mx36 and 2Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface for read and write input ports.  2.0 cycle read latency.  Fixed 4-bit burst for read and write operations.  Clock stop support.  Two input clocks (K and K#) for address and control registering at rising edges only.  Two echo clocks (CQ and CQ#) that are delivered simultaneously with data.  Data Valid Pin (QVLD).  +1.8V core power supply and 1.5, 1.8V VDDQ, used with 0.75, 0.9V VREF. DESCRIPTION The 36Mb IS61QDP2B41M36A/A1/A2 and IS61QDP2B42M18A/A1/A2 are synchronous, highperformance CMOS static random access memory (SRAM) devices. These SRAMs have separate I/Os, eliminating the need for high-speed bus turnaround. The rising edge of K clock initiates the read/write operation, and all internal operations are self-timed. Refer to the Timing Reference Diagram for Truth Table for a description of the basic operations of these QUADP (Burst of 4) SRAMs. Read and write addresses are registered on alternating rising edges of the K clock. Reads and writes are performed in double data rate. The following are registered internally on the rising edge of the K clo...