IS61QDPB251236A2

IS61QDPB21M18A/A1/A2 IS61QDPB251236A/A1/A2 1Mx18, 512Kx36 18Mb QUADP (Burst 2) Synchronous SRAM (2.5 CYCLE READ LATENCY) OCTOBER 2014 FEATURES  512Kx36 and 1Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Separate independent read and write ports with concurrent read and write operations.  Synchronous pipeline read with EARLY write operation.  Double Data Rate (DDR) interface for read and write input ports.  2.5 Cycle read latency.  Fixed 2-bit burst for read and write operations.  Clock stop support.  Two input clocks (K and K#) for address and control registering at rising edges only.  Two echo clocks (CQ and CQ#) that are delivered simultaneously with data. DESCRIPTION The and are synchronous, high- performance CMOS static random access memory (SRAM) devices. These SRAMs have separate I/Os, eliminating the need for high-speed bus turnaround. The rising edge of K clock initiates the read/write operation, and all internal operations are self-timed. Refer to the for a description of the basic operations of these SRAMs. Read and write addresses are registered on alternating rising edges of the K clock. Read and write performed in double data rate. The following are registered internally on the rising edge of the K clock:  Read address  Read enable  Write enable  Data valid pin (QVLD).  Data-in for early writes  +1.8V core power supply and 1.5, 1.8V VDDQ, used with 0.75, 0.9V VREF.  HSTL input and o...