Document
SILICON PLANAR ZENER DIODES
Features • Total power dissipation: max. 500 mW • Small plastic package suitable for
surface mounted design • Tolerance approximately ± 5%
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Power Dissipation Junction Temperature Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 10 mA
MM1Z2V0~MM1Z75
PINNING PIN 1 2
1
DESCRIPTION Cathode Anode
2
Top View Simplified outline SOD-123 and symbol
Symbol Ptot Tj TS
Value 500 150 - 55 to + 150
Unit mW OC OC
Symbol RthA
VF
Max. 340
0.9
Unit OC/W
V
JinYu
semiconductor
www.htsemi.com
MM1Z2V0~MM1Z75
Characteristics at Ta = 25 OC
Type
Marking Code
Zener Voltage Range 1)
Vznom V
lZT for mA
VZT V
MM1Z2V0
4A
2.0
5
1.8...2.15
MM1Z2V2
4B
2.2
5
2.08...2.33
MM1Z2V4
4C
2.4
5
2.28...2.56
MM1Z2V7
4D
2.7
5
2.5...2.9
MM1Z3V0
4E
3.0
5
2.8...3.2
MM1Z3V3
4F
3.3
5
3.1...3.5
MM1Z3V6
4H
3.6
5
3.4...3.8
MM1Z3V9
4J
3.9
5
3.7...4.1
MM1Z4V3
4K
4.3
5
4...4.6
MM1Z4V7
4M
4.7
5
4.4...5
MM1Z5V1
4N
5.1
5
4.8...5.4
MM1Z5V6
4P
5.6
5
5.2...6
MM1Z6V2
4R
6.2
5
5.8...6.6
MM1Z6V8
4X
6.8
5
6.4...7.2
MM1Z7V5
4Y
7.5
5
7...7.9
MM1Z8V2
4Z
8.2
5
7.7...8.7
MM1Z9V1
5A
9.1
5
8.5...9.6
MM1Z10
5B 10 5 9.4...10.6
MM1Z11
5C 11 5 10.4...11.6
MM1Z12
5D 12 5 11.4...12.7
MM1Z13
5E 13 5 12.4...14.1
MM1Z15
5F 15 5 13.8...15.6
MM1Z16
5H 16 5 15.3...17.1
MM1Z18
5J 18 5 16.8...19.1
MM1Z20
5K 20 5 18.8...21.2
MM1Z22
5M 22 5 20.8...23.3
MM1Z24
5N 24 5 22.8...25.6
MM1Z27
5P 27 5 25.1...28.9
MM1Z30
5R 30 5
28...32
MM1Z33
5X 33 5
31...35
MM1Z36
5Y 36 5
34...38
MM1Z39
5Z 39 2.5
37...41
MM1Z43
6A 43 2.5
40...46
MM1Z47
6B 47 2.5
44...50
MM1Z51
6C 51 2.5
48...54
MM1Z56
6D 56 2.5
52...60
MM1Z62
6E 62 2.5
58...66
MM1Z68
6F 68 2.5
64...72
MM1Z75
6H 75 2.5
70...79
1) VZ is tested with pulses (20 ms). 2) ZZT is measured at IZ by given a very small A.C. current signal.
Dynamic Impedance 2)
ZZT (Max.)
Ω
100
at IZ mA 5
100 5
100 5
110 5
120 5
130 5
130 5
130 5
130 5
130 5
130 5
80 5
50 5
30 5
30 5
30 5
30 5
30 5
30 5
35 5
35 5
40 5
40 5
45 5
50 5
55 5
60 5
70 2
80 2
80 2
90 2
100 2
130 2
150 2
180 2
180 2
200 2
250 2
300 2
Reverse Leakage Current
IR (Max.) μA
at VR V
120 0.5
120 0.7
120 1
120 1
50 1
20 1
10 1
51
51
21
2 1.5
1 2.5
13
0.5 3.5
0.5 4
0.5 5
0.5 6
0.1 7
0.1 8
0.1 9
0.1 10
0.1 11
0.1 12
0.1 13
0.1 15
0.1 17
0.1 19
0.1 21
0.1 23
0.1 25
0.1 27
2 30
2 33
2 36
1 39
1 43
0.2 47
0.2 52
0.2 57
JinYu
semiconductor
www.htsemi.com
MM1Z2V0~MM1Z75
Breakdown characteristics
Tj = constant (pulsed)
mA 50 Tj=25oC
Iz 40
2V7 3V3
3V9 4V7
6V8
5V6 30
8V2
20
Test current Iz 5mA 10
0 01
23 4 56 7 Vz
8 9 10 V
Breakdown characteristics
Tj = constant (pulsed)
mA 30 Iz 20
10
10 12 15
Test current Iz 5mA
18 22
27
Tj=25 oC 33
0
0
10 20
30 40 V
Vz
JinYu
semiconductor
www.htsemi.com
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
∠ ALL ROUND
HE
D A
MM1Z2V0~MM1Z75
SOD-123
E bp c
A
UNIT A bp c D E HE v
mm
1.15 1.05
0.6 0.5
0.135 0.127
2.7 2.6
1.65 1.55
3.9 3.7
0.2
∠ 5O
JinYu
semiconductor
www.htsemi.com
.