2N4340

2N4338/4339/4340/4341 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number 2N4338 2N4339 2N4340 2N4341 VGS(off) (V) –0.3 to –1 –0.6 to –1.8 –1 to –3 –2 to –6 V(BR)GSS Min (V) gfs Min (mS) –50 0.6 –50 0.8 –50 1.3 –50 2 IDSS Max (mA) 0.6 1.5 3.6 9 FEATURES D Low Cutoff Voltage: 2N4338 <1 V D High Input Impedance D Very Low Noise D High Gain: AV = 80 @ 20 mA BENEFITS D Full Performance from Low-Voltage Power Supply: Down to 1 V D Low Signal Loss/System Error D High System Sensitivity D High-Quality Low-Level Signal Amplification APPLICATIONS D High-Gain, Low-Noise Amplifiers D Low-Current, Low-Voltage Battery-Powered Amplifiers D Infrared Detector Amplifiers D Ultrahigh Input Impedance Pre-Amplifiers DESCRIPTION The 2N4338/4339/4340/4341 n-channel JFETs are designed for sensitive amplifier stages at low- to mid-frequencies. Low cut-off voltages accommodate low-level power supplies and low leakage for improved system accuracy. The TO-206AA (TO-18) package is hermetically sealed and suitable for military processing (see Military Information). For similar products in TO-226AA (TO-92) and TO-236 (SOT-23) packages, see the J/SST201 series data sheet. TO-206AA (TO-18) S 1 2 D 3 Top View G and Case ABSOLUTE MAXIMUM RATINGS Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 V Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Storage Temperature . . . . . . . ...