N-Channel MOSFET
2N4338 2N4340 2N4339 2N4341
SILICON N-CHANNEL JFETS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMIC...
Description
2N4338 2N4340 2N4339 2N4341
SILICON N-CHANNEL JFETS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4338 Series devices are silicon N-Channel JFETs mounted in a hermetically sealed metal case designed for low level, low noise amplifier applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C) Gate-Drain Voltage Gate-Source Voltage Drain-Source Voltage Gate Current Power Dissipation Operating and Storage Junction Temperature
SYMBOL VGD VGS VDS IG PD
TJ, Tstg
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N4338
2N4339
SYMBOL TEST CONDITIONS
MIN MAX MIN MAX
IGSS
VGS=30V, VDS=0
- 0.1
- 0.1
IDSS
VDS=15V, VGS=0
0.2 0.6 0.5 1.5
BVGSS
IG=1.0μA
50 -
50 -
VGS(OFF)
|yfs| |yos|
VDS=15V, ID=0.1μA VDS=15V, f=1.0kHz VDS=15V, f=1.0kHz
0.3 1.0 0.6 1.8
- 5.0
0.6 1.8 0.8 2.4
- 15
Ciss VDS=15V, f=1.0MHz
- 6.0
- 6.0
Crss
VDS=15V, f=1.0MHz
- 2.0
- 2.0
NF
VDS=15V, f=1.0kHz, RG=1.0MΩ - 1.0
- 1.0
50 50 50 5...
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