DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2733GR
SWITCHING P-CHANNEL POWER MOSFET
DESCRIPTION
The μ PA2733GR is P-chan...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
μ PA2733GR
SWITCHING P-CHANNEL POWER MOSFET
DESCRIPTION
The μ PA2733GR is P-channel MOS Field Effect
Transistor designed for power management applications of notebook computers and so on.
PACKAGE DRAWING (Unit: mm)
85
1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain
FEATURES
Low on-state resistance RDS(on)1 = 38 mΩ MAX. (VGS = −10 V, ID = −2.5 A) RDS(on)2 = 53 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A)
Low Ciss: Ciss = 870 pF TYP. Built-in gate protection diode Small and surface mount package (Power SOP8)
1.8 MAX.
1.44
14 5.37 MAX.
6.0 ±0.3 4.4
+0.10 –0.05
0.15
1.27 0.78 MAX.
0.5 ±0.2
0.8 0.10
0.05 MIN.
ORDERING INFORMATION
0.40
+0.10 –0.05
0.12 M
PART NUMBER
PACKAGE
μ PA2733GR-E1 μ PA2733GR-E1-A Note
Power SOP8 Power SOP8
μ PA2733GR-E2 μ PA2733GR-E2-A Note
Power SOP8 Power SOP8
Note Pb-free (This product does not contain Pb in external electrode and other parts.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation Note2 Total Power Dissipation (PW = 10 sec) Note2
VDSS VGSS ID(DC) ID(pulse) PT1 PT2
−30
m20 m5 m20 1.1
2.5
V V A A W W
Channel Temperature Storage Temperature
Tch 150 °C Tstg –55 to +150 °C
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Gate
Protec...