N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package ...
Description
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
TMP5N60Z(G)/TMPF5N60Z(G)
BVDSS 600V
N-channel MOSFET
ID RDS(on)
4.2A
<2.1W
Device TMP5N60Z / TMPF5N60Z TMPF5N60ZG / TMPF5N60ZG
Package TO-220 / TO-220F TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking TMP5N60Z / TMPF5N60Z TMPF5N60ZG / TMPF5N60ZG
Remark RoHS
Halogen Free
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
TMP5N60Z(G) TMPF5N60Z(G) 600 ±30
4.2 4.2 * 2.65 2.65 * 16.8 16.8 *
235 4.2 9.84 98.4 32.9 0.78 0.26 4.5 -55~150
300
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃
℃
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
TMP5N60Z(G) 1.27 62.5
June 2012 : Rev0
www.trinnotech.com
TMPF5N60Z(G) 3.8 62.5
Unit ℃/W ℃/W
1/7
TMP5N60Z(G)/TMPF5N60Z(G)
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol...
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