Document
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
D-PAK
TMD5N60Z(G)/TMU5N60Z(G)
BVDSS 600V
N-channel MOSFET
ID RDS(on)MAX
4.2A
<2.1W
I-PAK
Device TMD5N60Z / TMU5N60Z TMD5N60ZG / TMU5N60ZG
Package D-PAK/I-PAK D-PAK/I-PAK
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking TMD5N60Z / TMU5N60Z TMD5N60ZG / TMU5N60ZG
Remark RoHS
Halogen Free
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
TMD5N60Z(G)/TMU5N60Z(G) 600 ±30 4.2 2.65 16.8 235 4.2 9.84 98.4 0.78 4.5
-55~150
300
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃
℃
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
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TMD5N60Z(G)/TMU5N60Z(G) 1.27 110
Unit ℃/W ℃/W
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TMD5N60Z(G)/TMU5N60Z(G)
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA 600 --
--
V
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
--
IDSS
VDS = 480 V, TC = 125°C
--
-- 1 µA -- 10 µA
Forward Gate-Source Leakage Current
IGSSF
VGS = 30 V, VDS = 0 V
--
-- 100 µA
Reverse Gate-Source Leakage Current
IGSSR
VGS = -30 V, VDS = 0 V
--
--
-100
µA
ON Gate Threshold Voltage
Drain-Source On-Resistance Forward Transconductance (Note 4)
VGS(th)
VDS = VGS, ID = 250 µA
2
--
4
V
RDS(on)
VGS = 10 V, ID = 2.1 A
-- 1.7 2.1 W
gFS VDS = 30 V, ID = 2.1 A -- 6 -- S
DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance
Ciss Coss Crss
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
-- 746 --- 69 --- 9 --
pF pF pF
SWITCHING Turn-On Delay Time (Note 4,5) Turn-On Rise Time (Note 4,5) Turn-Off Delay Time (Note 4,5) Turn-Off Fall Time (Note 4,5) Total Gate Charge (Note 4,5) Gate-Source Charge (Note 4,5) Gate-Drain Charge (Note 4,5)
td(on)
VDD = 325 V, ID = 4.2 A,
--
19
--
ns
tr
RG = 25 Ω
-- 27 -- ns
td(off)
-- 66 -- ns
tf -- 27 -- ns
Qg VDS = 520V, ID = 4.2 A, -- 18 -- nC
Qgs
VGS = 10 V
-- 4 -- nC
Qgd -- 8 -- nC
SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time (Note 4)
Reverse Recovery Charge (Note 4)
IS
ISM VSD trr Qrr
----
---VGS = 0 V, IS = 4.2 A VGS = 0 V, IS = 4.2 A dIF / dt = 100 A/µs
-- -- 4.2 A
-- -- 16.8 A
-- -- 1.5 V
-- 340 --
ns
-- 2.1 -- µC
Note :
1. Repeated rating : Pulse width limited by safe operating area 2. L=23.3mH, I AS = 4.2A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃ 3 I SD ≤ 4.2A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃ 4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
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TMD5N60Z(G)/TMU5N60Z(G)
Drain Current, I [A] D
Drain-Source On-Resistance R [Ω]
DS(ON)
10
Top V =15.0V GS 10.0V
8 9.0V 8.0V 7.0V 6.0V 5.5V
6 Bottom 5.0V
4
2 1. T = 25℃
C
2. 250μs Pulse Test 0
0 5 10 15 20
Drain-Source Voltage, V [V] DS
Drain Current, I [A] D
V = 30V DS
250 μs Pulse Test
10
150℃
25℃ 1
-55℃
0.1 2468
Gate-Source Voltage, V [V] GS
3.0
T = 25℃ J
2.5
2.0
1.5
1.0 0
2
Reverse Drain Current, I [A] DR
V = 10V GS
V = 20V GS
16
V = 0V GS
250μs Pulse Test
12
8
150℃
25℃
4
46
Drain Current,I [A] D
8
0 10 0.0
0.5 1.0 1.5
Source-Drain Voltage, V [V] SD
10 2.0
Gate-Source Voltage, V [V] GS
1500 1000
500
C = C + C (C = shorted) iss gs gd ds
C =C +C oss ds gd
C =C rss gd
C iss
V =0V GS
f = 1 MHz
C oss
C rss
12 I = 4.2A
D
10
8
6
4
2
V = 120V DS
V = 300V DS
V = 480V DS
0 10-1 100 101
Drain-Source Voltage, V [V] DS
July 2012 : Rev0
0 0
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5 10 15
Total Gate Charge, Q [nC] G
20
3/6
Capacitance [pF]
Drain-Source Breakdown Voltage BV , (Normalized)
DSS
TMD5N60Z(G)/TMU5N60Z(G)
1.20 1.15 1.10
V =0V GS
I = 250 μA
D
1.05
1.00
0.95
0.90
0.85
0.80 -80
-40
0 40 80
Junction Temperature,T [oC] J
120
3.0
V = 10 V GS
I = 2.1 A 2.5 D
Drain-Source On-Resistance R , (Normalized)
DS(ON)
2.0
1.5
1.0
0.5
0.0 160 -80
-40 0 40 80 120
Junction Temperature, T [oC] J
160
5 1.5
Gate Threshold Voltage V , (Normalized)
TH
4
1.0 3
2 0.5
1 V =V
DS GS
I = 250 A
D
0 0.0
25
50
75
100
125
150
-80 -40
0
40 80 120 160
Case Temperature, T [℃] C
Junction Temperature, T [oC] J
Drain Current, I [A] D
Drain Curre.