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TMU5N60Z Dataheets PDF



Part Number TMU5N60Z
Manufacturers TRinno
Logo TRinno
Description N-channel MOSFET
Datasheet TMU5N60Z DatasheetTMU5N60Z Datasheet (PDF)

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TMD5N60Z(G)/TMU5N60Z(G) BVDSS 600V N-channel MOSFET ID RDS(on)MAX 4.2A <2.1W I-PAK Device TMD5N60Z / TMU5N60Z TMD5N60ZG / TMU5N60ZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche.

  TMU5N60Z   TMU5N60Z



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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TMD5N60Z(G)/TMU5N60Z(G) BVDSS 600V N-channel MOSFET ID RDS(on)MAX 4.2A <2.1W I-PAK Device TMD5N60Z / TMU5N60Z TMD5N60ZG / TMU5N60ZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMD5N60Z / TMU5N60Z TMD5N60ZG / TMU5N60ZG Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMD5N60Z(G)/TMU5N60Z(G) 600 ±30 4.2 2.65 16.8 235 4.2 9.84 98.4 0.78 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA July 2012 : Rev0 www.trinnotech.com TMD5N60Z(G)/TMU5N60Z(G) 1.27 110 Unit ℃/W ℃/W 1/6 TMD5N60Z(G)/TMU5N60Z(G) Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 600 -- -- V Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- IDSS VDS = 480 V, TC = 125°C -- -- 1 µA -- 10 µA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 µA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 µA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) VGS(th) VDS = VGS, ID = 250 µA 2 -- 4 V RDS(on) VGS = 10 V, ID = 2.1 A -- 1.7 2.1 W gFS VDS = 30 V, ID = 2.1 A -- 6 -- S DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 746 --- 69 --- 9 -- pF pF pF SWITCHING Turn-On Delay Time (Note 4,5) Turn-On Rise Time (Note 4,5) Turn-Off Delay Time (Note 4,5) Turn-Off Fall Time (Note 4,5) Total Gate Charge (Note 4,5) Gate-Source Charge (Note 4,5) Gate-Drain Charge (Note 4,5) td(on) VDD = 325 V, ID = 4.2 A, -- 19 -- ns tr RG = 25 Ω -- 27 -- ns td(off) -- 66 -- ns tf -- 27 -- ns Qg VDS = 520V, ID = 4.2 A, -- 18 -- nC Qgs VGS = 10 V -- 4 -- nC Qgd -- 8 -- nC SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time (Note 4) Reverse Recovery Charge (Note 4) IS ISM VSD trr Qrr ---- ---VGS = 0 V, IS = 4.2 A VGS = 0 V, IS = 4.2 A dIF / dt = 100 A/µs -- -- 4.2 A -- -- 16.8 A -- -- 1.5 V -- 340 -- ns -- 2.1 -- µC Note : 1. Repeated rating : Pulse width limited by safe operating area 2. L=23.3mH, I AS = 4.2A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃ 3 I SD ≤ 4.2A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃ 4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics July 2012 : Rev0 www.trinnotech.com 2/6 TMD5N60Z(G)/TMU5N60Z(G) Drain Current, I [A] D Drain-Source On-Resistance R [Ω] DS(ON) 10 Top V =15.0V GS 10.0V 8 9.0V 8.0V 7.0V 6.0V 5.5V 6 Bottom 5.0V 4 2 1. T = 25℃ C 2. 250μs Pulse Test 0 0 5 10 15 20 Drain-Source Voltage, V [V] DS Drain Current, I [A] D V = 30V DS 250 μs Pulse Test 10 150℃ 25℃ 1 -55℃ 0.1 2468 Gate-Source Voltage, V [V] GS 3.0 T = 25℃ J 2.5 2.0 1.5 1.0 0 2 Reverse Drain Current, I [A] DR V = 10V GS V = 20V GS 16 V = 0V GS 250μs Pulse Test 12 8 150℃ 25℃ 4 46 Drain Current,I [A] D 8 0 10 0.0 0.5 1.0 1.5 Source-Drain Voltage, V [V] SD 10 2.0 Gate-Source Voltage, V [V] GS 1500 1000 500 C = C + C (C = shorted) iss gs gd ds C =C +C oss ds gd C =C rss gd C iss V =0V GS f = 1 MHz C oss C rss 12 I = 4.2A D 10 8 6 4 2 V = 120V DS V = 300V DS V = 480V DS 0 10-1 100 101 Drain-Source Voltage, V [V] DS July 2012 : Rev0 0 0 www.trinnotech.com 5 10 15 Total Gate Charge, Q [nC] G 20 3/6 Capacitance [pF] Drain-Source Breakdown Voltage BV , (Normalized) DSS TMD5N60Z(G)/TMU5N60Z(G) 1.20 1.15 1.10 V =0V GS I = 250 μA D 1.05 1.00 0.95 0.90 0.85 0.80 -80 -40 0 40 80 Junction Temperature,T [oC] J 120 3.0 V = 10 V GS I = 2.1 A 2.5 D Drain-Source On-Resistance R , (Normalized) DS(ON) 2.0 1.5 1.0 0.5 0.0 160 -80 -40 0 40 80 120 Junction Temperature, T [oC] J 160 5 1.5 Gate Threshold Voltage V , (Normalized) TH 4 1.0 3 2 0.5 1 V =V DS GS I = 250  A D 0 0.0 25 50 75 100 125 150 -80 -40 0 40 80 120 160 Case Temperature, T [℃] C Junction Temperature, T [oC] J Drain Current, I [A] D Drain Curre.


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