N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package ...
Description
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
TMP2N60Z(G)/TMPF2N60Z(G)
BVDSS 600V
N-channel MOSFET ID RDS(on)MAX 2A <4.0W
Device TMP2N60Z / TMPF2N60Z TMP2N60ZG / TMPF2N60ZG
Package TO-220 / TO-220F TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking TMP2N60Z / TMPF2N60Z TMP2N60ZG / TMPF2N60ZG
Remark RoHS
Halogen Free
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
TMP2N60Z(G) TMPF2N60Z(G)
600 ±30 2 2*
1.4 1.4 * 8 8*
128
2 5.2
52 17.3
0.416
0.138
4.5
-55~150
300
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃
℃
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
TMP2N60Z(G) 2.4 62.5
May 2012 : Rev0
www.trinnotech.com
TMPF2N60Z(G) 7.2 62.5
Unit ℃/W ℃/W
1/7
TMP2N60Z(G)/TMPF2N60Z(G)
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test condit...
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