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TMPF2N60AZ Dataheets PDF



Part Number TMPF2N60AZ
Manufacturers TRinno
Logo TRinno
Description N-channel MOSFET
Datasheet TMPF2N60AZ DatasheetTMPF2N60AZ Datasheet (PDF)

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance TMP2N60AZ(G)/TMPF2N60AZ(G) BVDSS 600V N-channel MOSFET ID RDS(on) 2.0A < 4.0W Device TMP2N60AZ / TMPF2N60AZ TMP2N60AZG / TMPF2N60AZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC .

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance TMP2N60AZ(G)/TMPF2N60AZ(G) BVDSS 600V N-channel MOSFET ID RDS(on) 2.0A < 4.0W Device TMP2N60AZ / TMPF2N60AZ TMP2N60AZG / TMPF2N60AZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP2N60AZ / TMPF2N60AZ TMP2N60AZG / TMPF2N60AZG Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP2N60AZ(G) TMPF2N60AZ(G) 600 ±30 2.0 2.0 * 1.43 1.43 * 8 8* 66 2.0 5.21 52.1 17.3 0.416 0.138 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA TMP2N60AZ(G) 2.4 62.5 October 2012 : Rev0 www.trinnotech.com TMPF2N60AZ(G) 7.2 62.5 Unit ℃/W ℃/W 1/7 TMP2N60AZ(G)/TMPF2N60AZ(G) Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 600 -- -- V Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- IDSS VDS = 480 V, TC = 125°C -- -- 1 µA -- 10 µA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 µA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 µA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) VGS(th) VDS = VGS, ID = 250 µA 3 -- 5 V RDS(on) VGS = 10 V, ID = 1.0 A -- 3.2 4.0 W gFS VDS = 30 V, ID = 1.0 A -- 3 -- S DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 360 --- 41 --- 7 -- pF pF pF SWITCHING Turn-On Delay Time (Note 4,5) Turn-On Rise Time (Note 4,5) Turn-Off Delay Time (Note 4,5) Turn-Off Fall Time (Note 4,5) Total Gate Charge (Note 4,5) Gate-Source Charge (Note 4,5) Gate-Drain Charge (Note 4,5) td(on) VDD = 300 V, ID = 2.0 A, -- 20 -- ns tr RG = 25 Ω, VGS = 10 V -- 23 -- ns td(off) -- 42 -- ns tf -- 20 -- ns Qg VDS = 480 V, ID = 2.0 A, -- 9 -- nC Qgs VGS = 10 V -- 2 -- nC Qgd -- 4 -- nC SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time (Note 4) Reverse Recovery Charge (Note 4) IS ISM VSD trr Qrr ---- ---VGS = 0 V, IS = 2.0 A VGS = 0 V, IS = 2.0 A dIF / dt = 100 A/µs -- -- 2.0 A -- -- 8 A -- -- 1.5 V -- 240 -- ns -- 0.8 -- µC Note : 1. Repeated rating : Pulse width limited by safe operating area 2. L=30.5mH, I AS = 2.0A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃ 3 I SD ≤ 2.0A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃ 4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics October 2012 : Rev0 www.trinnotech.com 2/7 Drain Current, I [A] D TMP2N60AZ(G)/TMPF2N60AZ(G) 6 Top V =15.0V GS 10.0V 9.0V 8.0V 7.0V 4 6.0V Bottom 5.5V 2 1. T = 25℃ C 2. 250μs Pulse Test 0 0 5 10 15 20 Drain-Source Voltage, V [V] DS 6 T = 25℃ J 5 4 3 2 01 V = 10V GS 234 Drain Current,I [A] D V = 20V GS 56 Reverse Drain Current, I [A] DR Drain Current, I [A] D 10 V = 30V DS 250 μs Pulse Test 150℃ 1 25℃ -55℃ 0.1 2468 Gate-Source Voltage, V [V] GS 8 V = 0V GS 250μs Pulse Test 6 4 150℃ 25℃ 2 0 0.0 0.5 1.0 1.5 Source-Drain Voltage, V [V] SD 10 2.0 Drain-Source On-Resistance R [Ω] DS(ON) Capacitance [pF] 600 500 C = C + C (C = shorted) iss gs gd ds C =C +C oss ds gd C =C rss gd 12 I = 2.0A D 10 V = 300V DS C V =0V GS 400 iss f = 1 MHz 8 V = 120V DS Gate-Source Voltage, V [V] GS 300 C oss 200 C rss 100 6 4 2 V = 480V DS 0 10-1 100 101 Drain-Source Voltage, V [V] DS October 2012 : Rev0 0 02 www.trinnotech.com 468 Total Gate Charge, Q [nC] G 10 12 3/7 TMP2N60AZ(G)/TMPF2N60AZ(G) Drain-Source Breakdown Voltage BV , (Normalized) DSS 1.20 1.15 1.10 V =0V GS I = 250 μA D 1.05 1.00 0.95 0.90 0.85 0.80 -80 -40 0 40 80 Junction Temperature,T [oC] J 120 160 Drain-Source On-Resistance R , (Normalized) DS(ON) 3.0 V = 10 V GS I = 1.0 A D 2.5 2.0 1.5 1.0 0.5 0.0 -80 -40 0 40 80 120 Junction Temperature, T [oC] J 160 Drain Current, I [A] D 2.0 1.5 1.5 1.0 0.5 0.0 25 Gate Threshold Voltage V , (Normalized) TH 1.0 50 75 100 125 Case Temperature, T [℃] C 0.5 .


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