TMPF20N50

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP20N50/TMPF20N50 TMP20N50G/TMPF20N50G VDSS = 550 V @Tjmax ID = 18A RDS(on) = 0.3 W(max) @ VGS= 10 V D G S Device TMP20N50 / TMPF20N50 TMP20N50G / TMPF20N50G Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP20N50 / TMPF20N50 TMP20N50G / TMPF20N50G Remark RoHS Halogen Free Symbol VDS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP20N50(G) TMPF20N50(G) 500 ±30 18 18* 13.1 13.1* 72 72* 954 18 29 290 48 2.32 0.38 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA TMP20N50(G) 0.43 62.5 December 2010 : Rev2 www.trinnotech.com TMPF20N50(G) 2.6 62.5 Unit ℃/W ℃/W 1/5 TMP20N50/TMPF20N50 TMP20N50G/TMPF20N50G Electrical Characteristics : TC=25℃, unless oth...